Microsecond Crystallization of Amorphous Silicon Films on Glass Substrates by Joule Heating
Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films was conducted by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. The phase-transformation phen...
Gespeichert in:
Veröffentlicht in: | ECS journal of solid state science and technology 2016-01, Vol.5 (10), p.R187-R191 |
---|---|
Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films was conducted by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. The phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. We devised a method for the crystallization of a-Si films while preventing arc generation; this method consisted of pre-patterning an a-Si active layer into islands and then depositing a gate oxide and gate electrode. Electric pulsing was then applied to the gate electrode formed using a Mo layer. JIC-processed poly-Si thin-film transistors were fabricated successfully, and the proposed method was found to be compatible with the standard processing of coplanar top-gate poly-Si TFTs. The p-channel JIC poly-Si TFT with W/L = 7 μm/7 μm exhibited a field effect mobility of 38.9 cm2/V-s, a threshold voltage of −2.8 V, and a gate voltage swing of 0.35 V/dec. |
---|---|
ISSN: | 2162-8769 2162-8769 2162-8777 |
DOI: | 10.1149/2.0031612jss |