Microsecond Crystallization of Amorphous Silicon Films on Glass Substrates by Joule Heating
Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films was conducted by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. The phase-transformation phen...
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| Veröffentlicht in: | ECS journal of solid state science and technology 2016-01, Vol.5 (10), p.R187-R191 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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