ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND ETCHING PROCESS OF SILICON NITRIDE LAYER USING THE SAME

Disclosed are: a composition for etching a silicon nitride layer containing a phosphoric acid compound, water, and a predetermined first compound, a reaction product of the first compound, a predetermined second compound, a reaction product of the second compound, or a combination thereof; and an et...

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Bibliographische Detailangaben
Hauptverfasser: JANG JUN YOUNG, CHOI JUNG MIN, CHO YOUN JIN, MOON HYUNG RANG, HAN KWEN WOO, HWANG KI WOOK, KIM YUN JUN
Format: Patent
Sprache:eng ; kor
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