ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND ETCHING PROCESS OF SILICON NITRIDE LAYER USING THE SAME
Disclosed are: a composition for etching a silicon nitride layer containing a phosphoric acid compound, water, and a predetermined first compound, a reaction product of the first compound, a predetermined second compound, a reaction product of the second compound, or a combination thereof; and an et...
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Format: | Patent |
Sprache: | eng ; kor |
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