ETCHING COMPOSITION FOR SILICON NITRIDE LAYER AND ETCHING PROCESS OF SILICON NITRIDE LAYER USING THE SAME

Disclosed are: a composition for etching a silicon nitride layer containing a phosphoric acid compound, water, and a predetermined first compound, a reaction product of the first compound, a predetermined second compound, a reaction product of the second compound, or a combination thereof; and an et...

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Bibliographische Detailangaben
Hauptverfasser:	JANG JUN YOUNG, CHOI JUNG MIN, CHO YOUN JIN, MOON HYUNG RANG, HAN KWEN WOO, HWANG KI WOOK, KIM YUN JUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Disclosed are: a composition for etching a silicon nitride layer containing a phosphoric acid compound, water, and a predetermined first compound, a reaction product of the first compound, a predetermined second compound, a reaction product of the second compound, or a combination thereof; and an etching method performed by using the same. In the present invention, an etching selectivity for the silicon nitride layer is improved compared to a silicon oxide layer. 인산화합물; 물; 및 소정의 제1화합물, 상기 제1화합물의 반응 생성물, 소정의 제2화합물, 상기 제2화합물의 반응 생성물 또는 이들의 조합; 을 포함한 실리콘 질화막 식각용 조성물, 및 이를 이용하여 수행되는 식각 방법이 개시된다.