HEAT TREATMENT METHOD, PROGRAM AND HEAT TREATMENT APPARATUS

To provide a technique for accelerating the change in solubility in heat treatment of a substrate on whose surface is formed an exposed resist whose solubility in the developing solution of the exposed or unexposed portions changes when heated in reaction with water.SOLUTION: It has a stage in which...

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Bibliographische Detailangaben
Hauptverfasser: ONITSUKA TOMOYA, KAWAKAMI SHINICHIRO, SANO YOHEI
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To provide a technique for accelerating the change in solubility in heat treatment of a substrate on whose surface is formed an exposed resist whose solubility in the developing solution of the exposed or unexposed portions changes when heated in reaction with water.SOLUTION: It has a stage in which a substrate with an exposed resist film on its surface that reacts with water and changes its solubility in the developer solution in the exposed or unexposed portions by heating, is placed; a lifting mechanism for raising and lowering the substrate relatively between a first position on which the substrate is placed on the stage and a second position away from the stage; and a gas supply section that supplies a first gas that is more humid than the atmosphere in which the stage is provided to the substrate at the second position before moving to the first position.SELECTED DRAWING: Figure 1 【課題】水と反応して加熱されることで露光部または未露光部の現像液に対する溶解性が変化する露光済みのレジストが表面に形成された基板を熱処理するにあたって、当該溶解性の変化を促進する技術を提供する。【解決手段】水と反応して加熱されることで露光部または未露光部の現像液に対する溶解性が変化する露光済みのレジスト膜が表面に形成された基板を載置して加熱するステージと、前記基板を前記ステージに載置される第1の位置と、当該ステージから離れた第2の位置との間で相対的に昇降させる昇降機構と、前記第1の位置に移動する前の前記第2の位置に位置する前記基板に、前記ステージが設けられる雰囲気よりも湿度が高い第1のガスを供給するガス供給部と、を備える。【選択図】図1