HEAT TREATMENT METHOD, PROGRAM AND HEAT TREATMENT APPARATUS
To provide a technique for accelerating the change in solubility in heat treatment of a substrate on whose surface is formed an exposed resist whose solubility in the developing solution of the exposed or unexposed portions changes when heated in reaction with water.SOLUTION: It has a stage in which...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | ONITSUKA TOMOYA KAWAKAMI SHINICHIRO SANO YOHEI |
| description | To provide a technique for accelerating the change in solubility in heat treatment of a substrate on whose surface is formed an exposed resist whose solubility in the developing solution of the exposed or unexposed portions changes when heated in reaction with water.SOLUTION: It has a stage in which a substrate with an exposed resist film on its surface that reacts with water and changes its solubility in the developer solution in the exposed or unexposed portions by heating, is placed; a lifting mechanism for raising and lowering the substrate relatively between a first position on which the substrate is placed on the stage and a second position away from the stage; and a gas supply section that supplies a first gas that is more humid than the atmosphere in which the stage is provided to the substrate at the second position before moving to the first position.SELECTED DRAWING: Figure 1
【課題】水と反応して加熱されることで露光部または未露光部の現像液に対する溶解性が変化する露光済みのレジストが表面に形成された基板を熱処理するにあたって、当該溶解性の変化を促進する技術を提供する。【解決手段】水と反応して加熱されることで露光部または未露光部の現像液に対する溶解性が変化する露光済みのレジスト膜が表面に形成された基板を載置して加熱するステージと、前記基板を前記ステージに載置される第１の位置と、当該ステージから離れた第２の位置との間で相対的に昇降させる昇降機構と、前記第１の位置に移動する前の前記第２の位置に位置する前記基板に、前記ステージが設けられる雰囲気よりも湿度が高い第１のガスを供給するガス供給部と、を備える。【選択図】図１ |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2024073500A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2024073500A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2024073500A3</originalsourceid><addsrcrecordid>eNrjZLD2cHUMUQgJApK-rn4hCr6uIR7-LjoKAUH-7kGOvgqOfi4KaEocAwIcgxxDQoN5GFjTEnOKU3mhNDeDkptriLOHbmpBfnxqcUFicmpeakm8V4CRgZGJgbmxqYGBozFRigAgoCmZ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HEAT TREATMENT METHOD, PROGRAM AND HEAT TREATMENT APPARATUS</title><source>esp@cenet</source><creator>ONITSUKA TOMOYA ; KAWAKAMI SHINICHIRO ; SANO YOHEI</creator><creatorcontrib>ONITSUKA TOMOYA ; KAWAKAMI SHINICHIRO ; SANO YOHEI</creatorcontrib><description>To provide a technique for accelerating the change in solubility in heat treatment of a substrate on whose surface is formed an exposed resist whose solubility in the developing solution of the exposed or unexposed portions changes when heated in reaction with water.SOLUTION: It has a stage in which a substrate with an exposed resist film on its surface that reacts with water and changes its solubility in the developer solution in the exposed or unexposed portions by heating, is placed; a lifting mechanism for raising and lowering the substrate relatively between a first position on which the substrate is placed on the stage and a second position away from the stage; and a gas supply section that supplies a first gas that is more humid than the atmosphere in which the stage is provided to the substrate at the second position before moving to the first position.SELECTED DRAWING: Figure 1
【課題】水と反応して加熱されることで露光部または未露光部の現像液に対する溶解性が変化する露光済みのレジストが表面に形成された基板を熱処理するにあたって、当該溶解性の変化を促進する技術を提供する。【解決手段】水と反応して加熱されることで露光部または未露光部の現像液に対する溶解性が変化する露光済みのレジスト膜が表面に形成された基板を載置して加熱するステージと、前記基板を前記ステージに載置される第１の位置と、当該ステージから離れた第２の位置との間で相対的に昇降させる昇降機構と、前記第１の位置に移動する前の前記第２の位置に位置する前記基板に、前記ステージが設けられる雰囲気よりも湿度が高い第１のガスを供給するガス供給部と、を備える。【選択図】図１</description><language>eng ; jpn</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240529&DB=EPODOC&CC=JP&NR=2024073500A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240529&DB=EPODOC&CC=JP&NR=2024073500A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ONITSUKA TOMOYA</creatorcontrib><creatorcontrib>KAWAKAMI SHINICHIRO</creatorcontrib><creatorcontrib>SANO YOHEI</creatorcontrib><title>HEAT TREATMENT METHOD, PROGRAM AND HEAT TREATMENT APPARATUS</title><description>To provide a technique for accelerating the change in solubility in heat treatment of a substrate on whose surface is formed an exposed resist whose solubility in the developing solution of the exposed or unexposed portions changes when heated in reaction with water.SOLUTION: It has a stage in which a substrate with an exposed resist film on its surface that reacts with water and changes its solubility in the developer solution in the exposed or unexposed portions by heating, is placed; a lifting mechanism for raising and lowering the substrate relatively between a first position on which the substrate is placed on the stage and a second position away from the stage; and a gas supply section that supplies a first gas that is more humid than the atmosphere in which the stage is provided to the substrate at the second position before moving to the first position.SELECTED DRAWING: Figure 1
【課題】水と反応して加熱されることで露光部または未露光部の現像液に対する溶解性が変化する露光済みのレジストが表面に形成された基板を熱処理するにあたって、当該溶解性の変化を促進する技術を提供する。【解決手段】水と反応して加熱されることで露光部または未露光部の現像液に対する溶解性が変化する露光済みのレジスト膜が表面に形成された基板を載置して加熱するステージと、前記基板を前記ステージに載置される第１の位置と、当該ステージから離れた第２の位置との間で相対的に昇降させる昇降機構と、前記第１の位置に移動する前の前記第２の位置に位置する前記基板に、前記ステージが設けられる雰囲気よりも湿度が高い第１のガスを供給するガス供給部と、を備える。【選択図】図１</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD2cHUMUQgJApK-rn4hCr6uIR7-LjoKAUH-7kGOvgqOfi4KaEocAwIcgxxDQoN5GFjTEnOKU3mhNDeDkptriLOHbmpBfnxqcUFicmpeakm8V4CRgZGJgbmxqYGBozFRigAgoCmZ</recordid><startdate>20240529</startdate><enddate>20240529</enddate><creator>ONITSUKA TOMOYA</creator><creator>KAWAKAMI SHINICHIRO</creator><creator>SANO YOHEI</creator><scope>EVB</scope></search><sort><creationdate>20240529</creationdate><title>HEAT TREATMENT METHOD, PROGRAM AND HEAT TREATMENT APPARATUS</title><author>ONITSUKA TOMOYA ; KAWAKAMI SHINICHIRO ; SANO YOHEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2024073500A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2024</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ONITSUKA TOMOYA</creatorcontrib><creatorcontrib>KAWAKAMI SHINICHIRO</creatorcontrib><creatorcontrib>SANO YOHEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ONITSUKA TOMOYA</au><au>KAWAKAMI SHINICHIRO</au><au>SANO YOHEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HEAT TREATMENT METHOD, PROGRAM AND HEAT TREATMENT APPARATUS</title><date>2024-05-29</date><risdate>2024</risdate><abstract>To provide a technique for accelerating the change in solubility in heat treatment of a substrate on whose surface is formed an exposed resist whose solubility in the developing solution of the exposed or unexposed portions changes when heated in reaction with water.SOLUTION: It has a stage in which a substrate with an exposed resist film on its surface that reacts with water and changes its solubility in the developer solution in the exposed or unexposed portions by heating, is placed; a lifting mechanism for raising and lowering the substrate relatively between a first position on which the substrate is placed on the stage and a second position away from the stage; and a gas supply section that supplies a first gas that is more humid than the atmosphere in which the stage is provided to the substrate at the second position before moving to the first position.SELECTED DRAWING: Figure 1
【課題】水と反応して加熱されることで露光部または未露光部の現像液に対する溶解性が変化する露光済みのレジストが表面に形成された基板を熱処理するにあたって、当該溶解性の変化を促進する技術を提供する。【解決手段】水と反応して加熱されることで露光部または未露光部の現像液に対する溶解性が変化する露光済みのレジスト膜が表面に形成された基板を載置して加熱するステージと、前記基板を前記ステージに載置される第１の位置と、当該ステージから離れた第２の位置との間で相対的に昇降させる昇降機構と、前記第１の位置に移動する前の前記第２の位置に位置する前記基板に、前記ステージが設けられる雰囲気よりも湿度が高い第１のガスを供給するガス供給部と、を備える。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; jpn |
| recordid | cdi_epo_espacenet_JP2024073500A |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | HEAT TREATMENT METHOD, PROGRAM AND HEAT TREATMENT APPARATUS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-20T02%3A46%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ONITSUKA%20TOMOYA&rft.date=2024-05-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2024073500A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |