A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps

A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages rm BV rm CEO of 1.7 V along with high-voltage HBTs (...

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Veröffentlicht in:IEEE journal of solid-state circuits 2010-09, Vol.45 (9), p.1678-1686
Hauptverfasser: Rucker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndorfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji
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Sprache:eng
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Zusammenfassung:A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages rm BV rm CEO of 1.7 V along with high-voltage HBTs ( f T = 50 ~ hbox GHz , f max = 130 ~ hbox GHz , rm BV rm CEO = 3.7 ~ hbox V ) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2010.2051475