A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps
A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages rm BV rm CEO of 1.7 V along with high-voltage HBTs (...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2010-09, Vol.45 (9), p.1678-1686 |
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Hauptverfasser: | , , , , , , , , , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages rm BV rm CEO of 1.7 V along with high-voltage HBTs ( f T = 50 ~ hbox GHz , f max = 130 ~ hbox GHz , rm BV rm CEO = 3.7 ~ hbox V ) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2010.2051475 |