A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps
A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages rm BV rm CEO of 1.7 V along with high-voltage HBTs (...
Gespeichert in:
| Veröffentlicht in: | IEEE journal of solid-state circuits 2010-09, Vol.45 (9), p.1678-1686 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1686 |
|---|---|
| container_issue | 9 |
| container_start_page | 1678 |
| container_title | IEEE journal of solid-state circuits |
| container_volume | 45 |
| creator | Rucker, Holger Heinemann, Bernd Winkler, Wolfgang Barth, R Borngraber, J Drews, J Fischer, Gerhard G Fox, Alexander Grabolla, Thomas Haak, U Knoll, Dieter Korndorfer, Falk Mai, Andreas Marschmeyer, Steffen Schley, P Schmidt, D Schmidt, J Schubert, Markus Andreas Schulz, K Tillack, Bernd Wolansky, D Yamamoto, Yuji |
| description | A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages rm BV rm CEO of 1.7 V along with high-voltage HBTs ( f T = 50 ~ hbox GHz , f max = 130 ~ hbox GHz , rm BV rm CEO = 3.7 ~ hbox V ) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated. |
| doi_str_mv | 10.1109/JSSC.2010.2051475 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_787179212</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>787179212</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_7871792123</originalsourceid><addsrcrecordid>eNqNjLFOwzAYBi0EEqHwAGzfxpTGv53IyUgDTYWEOiQDW2WK3QY5cakT0fL0ZOABmE4nnY6xe-JzIl4kL3VdzgWfVPCMUpVdsIiyLI9JybdLFnFOeVwIzq_ZTQifk6ZpThGzj5gOEt2I_bs_oUPdVgaLtnxd12jMdt9753dnLI0exmPb72DRILHo9AneQqQ8kZKjWv1A9x-o9GDwZJw-ByyM89-QOIRbdmW1C-bujzP2sHxuylV8OPqv0YRh07Vha5zTvfFj2KhckSoECfn_8hcEsUtL</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>787179212</pqid></control><display><type>article</type><title>A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps</title><source>IEEE Electronic Library (IEL)</source><creator>Rucker, Holger ; Heinemann, Bernd ; Winkler, Wolfgang ; Barth, R ; Borngraber, J ; Drews, J ; Fischer, Gerhard G ; Fox, Alexander ; Grabolla, Thomas ; Haak, U ; Knoll, Dieter ; Korndorfer, Falk ; Mai, Andreas ; Marschmeyer, Steffen ; Schley, P ; Schmidt, D ; Schmidt, J ; Schubert, Markus Andreas ; Schulz, K ; Tillack, Bernd ; Wolansky, D ; Yamamoto, Yuji</creator><creatorcontrib>Rucker, Holger ; Heinemann, Bernd ; Winkler, Wolfgang ; Barth, R ; Borngraber, J ; Drews, J ; Fischer, Gerhard G ; Fox, Alexander ; Grabolla, Thomas ; Haak, U ; Knoll, Dieter ; Korndorfer, Falk ; Mai, Andreas ; Marschmeyer, Steffen ; Schley, P ; Schmidt, D ; Schmidt, J ; Schubert, Markus Andreas ; Schulz, K ; Tillack, Bernd ; Wolansky, D ; Yamamoto, Yuji</creatorcontrib><description>A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages rm BV rm CEO of 1.7 V along with high-voltage HBTs ( f T = 50 ~ hbox GHz , f max = 130 ~ hbox GHz , rm BV rm CEO = 3.7 ~ hbox V ) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2010.2051475</identifier><language>eng</language><subject>Delay ; Electric potential ; Gates ; High speed ; Oscillations ; Oscillators ; Oxides ; Silicon germanides ; Voltage</subject><ispartof>IEEE journal of solid-state circuits, 2010-09, Vol.45 (9), p.1678-1686</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Rucker, Holger</creatorcontrib><creatorcontrib>Heinemann, Bernd</creatorcontrib><creatorcontrib>Winkler, Wolfgang</creatorcontrib><creatorcontrib>Barth, R</creatorcontrib><creatorcontrib>Borngraber, J</creatorcontrib><creatorcontrib>Drews, J</creatorcontrib><creatorcontrib>Fischer, Gerhard G</creatorcontrib><creatorcontrib>Fox, Alexander</creatorcontrib><creatorcontrib>Grabolla, Thomas</creatorcontrib><creatorcontrib>Haak, U</creatorcontrib><creatorcontrib>Knoll, Dieter</creatorcontrib><creatorcontrib>Korndorfer, Falk</creatorcontrib><creatorcontrib>Mai, Andreas</creatorcontrib><creatorcontrib>Marschmeyer, Steffen</creatorcontrib><creatorcontrib>Schley, P</creatorcontrib><creatorcontrib>Schmidt, D</creatorcontrib><creatorcontrib>Schmidt, J</creatorcontrib><creatorcontrib>Schubert, Markus Andreas</creatorcontrib><creatorcontrib>Schulz, K</creatorcontrib><creatorcontrib>Tillack, Bernd</creatorcontrib><creatorcontrib>Wolansky, D</creatorcontrib><creatorcontrib>Yamamoto, Yuji</creatorcontrib><title>A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps</title><title>IEEE journal of solid-state circuits</title><description>A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages rm BV rm CEO of 1.7 V along with high-voltage HBTs ( f T = 50 ~ hbox GHz , f max = 130 ~ hbox GHz , rm BV rm CEO = 3.7 ~ hbox V ) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.</description><subject>Delay</subject><subject>Electric potential</subject><subject>Gates</subject><subject>High speed</subject><subject>Oscillations</subject><subject>Oscillators</subject><subject>Oxides</subject><subject>Silicon germanides</subject><subject>Voltage</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqNjLFOwzAYBi0EEqHwAGzfxpTGv53IyUgDTYWEOiQDW2WK3QY5cakT0fL0ZOABmE4nnY6xe-JzIl4kL3VdzgWfVPCMUpVdsIiyLI9JybdLFnFOeVwIzq_ZTQifk6ZpThGzj5gOEt2I_bs_oUPdVgaLtnxd12jMdt9753dnLI0exmPb72DRILHo9AneQqQ8kZKjWv1A9x-o9GDwZJw-ByyM89-QOIRbdmW1C-bujzP2sHxuylV8OPqv0YRh07Vha5zTvfFj2KhckSoECfn_8hcEsUtL</recordid><startdate>20100901</startdate><enddate>20100901</enddate><creator>Rucker, Holger</creator><creator>Heinemann, Bernd</creator><creator>Winkler, Wolfgang</creator><creator>Barth, R</creator><creator>Borngraber, J</creator><creator>Drews, J</creator><creator>Fischer, Gerhard G</creator><creator>Fox, Alexander</creator><creator>Grabolla, Thomas</creator><creator>Haak, U</creator><creator>Knoll, Dieter</creator><creator>Korndorfer, Falk</creator><creator>Mai, Andreas</creator><creator>Marschmeyer, Steffen</creator><creator>Schley, P</creator><creator>Schmidt, D</creator><creator>Schmidt, J</creator><creator>Schubert, Markus Andreas</creator><creator>Schulz, K</creator><creator>Tillack, Bernd</creator><creator>Wolansky, D</creator><creator>Yamamoto, Yuji</creator><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20100901</creationdate><title>A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps</title><author>Rucker, Holger ; Heinemann, Bernd ; Winkler, Wolfgang ; Barth, R ; Borngraber, J ; Drews, J ; Fischer, Gerhard G ; Fox, Alexander ; Grabolla, Thomas ; Haak, U ; Knoll, Dieter ; Korndorfer, Falk ; Mai, Andreas ; Marschmeyer, Steffen ; Schley, P ; Schmidt, D ; Schmidt, J ; Schubert, Markus Andreas ; Schulz, K ; Tillack, Bernd ; Wolansky, D ; Yamamoto, Yuji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_7871792123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Delay</topic><topic>Electric potential</topic><topic>Gates</topic><topic>High speed</topic><topic>Oscillations</topic><topic>Oscillators</topic><topic>Oxides</topic><topic>Silicon germanides</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rucker, Holger</creatorcontrib><creatorcontrib>Heinemann, Bernd</creatorcontrib><creatorcontrib>Winkler, Wolfgang</creatorcontrib><creatorcontrib>Barth, R</creatorcontrib><creatorcontrib>Borngraber, J</creatorcontrib><creatorcontrib>Drews, J</creatorcontrib><creatorcontrib>Fischer, Gerhard G</creatorcontrib><creatorcontrib>Fox, Alexander</creatorcontrib><creatorcontrib>Grabolla, Thomas</creatorcontrib><creatorcontrib>Haak, U</creatorcontrib><creatorcontrib>Knoll, Dieter</creatorcontrib><creatorcontrib>Korndorfer, Falk</creatorcontrib><creatorcontrib>Mai, Andreas</creatorcontrib><creatorcontrib>Marschmeyer, Steffen</creatorcontrib><creatorcontrib>Schley, P</creatorcontrib><creatorcontrib>Schmidt, D</creatorcontrib><creatorcontrib>Schmidt, J</creatorcontrib><creatorcontrib>Schubert, Markus Andreas</creatorcontrib><creatorcontrib>Schulz, K</creatorcontrib><creatorcontrib>Tillack, Bernd</creatorcontrib><creatorcontrib>Wolansky, D</creatorcontrib><creatorcontrib>Yamamoto, Yuji</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rucker, Holger</au><au>Heinemann, Bernd</au><au>Winkler, Wolfgang</au><au>Barth, R</au><au>Borngraber, J</au><au>Drews, J</au><au>Fischer, Gerhard G</au><au>Fox, Alexander</au><au>Grabolla, Thomas</au><au>Haak, U</au><au>Knoll, Dieter</au><au>Korndorfer, Falk</au><au>Mai, Andreas</au><au>Marschmeyer, Steffen</au><au>Schley, P</au><au>Schmidt, D</au><au>Schmidt, J</au><au>Schubert, Markus Andreas</au><au>Schulz, K</au><au>Tillack, Bernd</au><au>Wolansky, D</au><au>Yamamoto, Yuji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><date>2010-09-01</date><risdate>2010</risdate><volume>45</volume><issue>9</issue><spage>1678</spage><epage>1686</epage><pages>1678-1686</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><abstract>A 0.13 mu hbox m SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages rm BV rm CEO of 1.7 V along with high-voltage HBTs ( f T = 50 ~ hbox GHz , f max = 130 ~ hbox GHz , rm BV rm CEO = 3.7 ~ hbox V ) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.</abstract><doi>10.1109/JSSC.2010.2051475</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 2010-09, Vol.45 (9), p.1678-1686 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_787179212 |
| source | IEEE Electronic Library (IEL) |
| subjects | Delay Electric potential Gates High speed Oscillations Oscillators Oxides Silicon germanides Voltage |
| title | A 0.13 mu hbox m SiGe BiCMOS Technology Featuring f T /f max of 240/330 GHz and Gate Delays Below 3 ps |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T13%3A58%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%200.13%20mu%20hbox%20m%20SiGe%20BiCMOS%20Technology%20Featuring%20f%20T%20/f%20max%20of%20240/330%20GHz%20and%20Gate%20Delays%20Below%203%20ps&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Rucker,%20Holger&rft.date=2010-09-01&rft.volume=45&rft.issue=9&rft.spage=1678&rft.epage=1686&rft.pages=1678-1686&rft.issn=0018-9200&rft.eissn=1558-173X&rft_id=info:doi/10.1109/JSSC.2010.2051475&rft_dat=%3Cproquest%3E787179212%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=787179212&rft_id=info:pmid/&rfr_iscdi=true |