Influence of Power and Film Thickness on the Properties of Rf PECVD Hydrogenated Amorphous Carbon Films
Two sets of hydrogenated amorphous carbon (a-C:H) films were deposited with different thicknesses at rf powers of 15 W and 50 W by varying the deposition time from the rf discharge of pure methane using our home-built plasma enhanced chemical vapour deposition (PECVD) system. The growth rate, optica...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | Two sets of hydrogenated amorphous carbon (a-C:H) films were deposited with different thicknesses at rf powers of 15 W and 50 W by varying the deposition time from the rf discharge of pure methane using our home-built plasma enhanced chemical vapour deposition (PECVD) system. The growth rate, optical energy gap, bonded hydrogen and the sp2 content in the films were obtained from the optical transmission and Fourier transform infrared (FTIR) of the films. The growth rate, hydrogen content and optical energy gap were found to be strongly dependent on rf power. The higher rf power reduced hydrogen content in the film which resulted in increase in sp2 content in the film structure with increase in film thickness. The optical energy gap decreased with increase in film thickness for both the higher and lower rf power films. |
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ISSN: | 0094-243X |
DOI: | 10.1063/1.2739839 |