Influence of Power and Film Thickness on the Properties of Rf PECVD Hydrogenated Amorphous Carbon Films

Influence of Power and Film Thickness on the Properties of Rf PECVD Hydrogenated Amorphous Carbon Films

Two sets of hydrogenated amorphous carbon (a-C:H) films were deposited with different thicknesses at rf powers of 15 W and 50 W by varying the deposition time from the rf discharge of pure methane using our home-built plasma enhanced chemical vapour deposition (PECVD) system. The growth rate, optica...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Awang, Rozidawati, Rahman, Saadah A
Format: Tagungsbericht
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 136
container_issue
container_start_page 133
container_title
container_volume 909
creator Awang, Rozidawati
Rahman, Saadah A
description Two sets of hydrogenated amorphous carbon (a-C:H) films were deposited with different thicknesses at rf powers of 15 W and 50 W by varying the deposition time from the rf discharge of pure methane using our home-built plasma enhanced chemical vapour deposition (PECVD) system. The growth rate, optical energy gap, bonded hydrogen and the sp2 content in the films were obtained from the optical transmission and Fourier transform infrared (FTIR) of the films. The growth rate, hydrogen content and optical energy gap were found to be strongly dependent on rf power. The higher rf power reduced hydrogen content in the film which resulted in increase in sp2 content in the film structure with increase in film thickness. The optical energy gap decreased with increase in film thickness for both the higher and lower rf power films.
doi_str_mv 10.1063/1.2739839
format Conference Proceeding
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_29891493</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29891493</sourcerecordid><originalsourceid>FETCH-LOGICAL-p186t-28561264258eac72b966234c10b060caacdd0f9c636f0c77c25dea7cb064a6e53</originalsourceid><addsrcrecordid>eNotjktPwkAYRSdRExFZ-A9m5a44r85jSSoICYnEoHFHhulXqJaZOtPG-O8t0dVd3HtOLkJ3lEwpkfyBTpniRnNzgSZGaaJ4LoigKr9EI0KMyJjg79foJqUPQphRSo_QYeWrpgfvAIcKb8I3RGx9iRd1c8LbY-0-PaSEg8fdEfAmhhZiV0M6r18GYF68PeLlTxnDAbztoMSzU4jtMfQJFzbuB_CsSrfoqrJNgsl_jtHrYr4tltn6-WlVzNZZS7XsMqZzSZkULNdgnWJ7IyXjwlGyJ5I4a11Zkso4yWVFnFKO5SVY5YZWWAk5H6P7P28bw1cPqdud6uSgaayH4dOOGW2oMJz_AtdgWWs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype><pqid>29891493</pqid></control><display><type>conference_proceeding</type><title>Influence of Power and Film Thickness on the Properties of Rf PECVD Hydrogenated Amorphous Carbon Films</title><source>AIP Journals Complete</source><creator>Awang, Rozidawati ; Rahman, Saadah A</creator><creatorcontrib>Awang, Rozidawati ; Rahman, Saadah A</creatorcontrib><description>Two sets of hydrogenated amorphous carbon (a-C:H) films were deposited with different thicknesses at rf powers of 15 W and 50 W by varying the deposition time from the rf discharge of pure methane using our home-built plasma enhanced chemical vapour deposition (PECVD) system. The growth rate, optical energy gap, bonded hydrogen and the sp2 content in the films were obtained from the optical transmission and Fourier transform infrared (FTIR) of the films. The growth rate, hydrogen content and optical energy gap were found to be strongly dependent on rf power. The higher rf power reduced hydrogen content in the film which resulted in increase in sp2 content in the film structure with increase in film thickness. The optical energy gap decreased with increase in film thickness for both the higher and lower rf power films.</description><identifier>ISSN: 0094-243X</identifier><identifier>ISBN: 9780735404175</identifier><identifier>ISBN: 0735404178</identifier><identifier>DOI: 10.1063/1.2739839</identifier><language>eng</language><ispartof>Solid State Science and Technology (AIP Conference Proceedings Volume 909), 2007, Vol.909, p.133-136</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Awang, Rozidawati</creatorcontrib><creatorcontrib>Rahman, Saadah A</creatorcontrib><title>Influence of Power and Film Thickness on the Properties of Rf PECVD Hydrogenated Amorphous Carbon Films</title><title>Solid State Science and Technology (AIP Conference Proceedings Volume 909)</title><description>Two sets of hydrogenated amorphous carbon (a-C:H) films were deposited with different thicknesses at rf powers of 15 W and 50 W by varying the deposition time from the rf discharge of pure methane using our home-built plasma enhanced chemical vapour deposition (PECVD) system. The growth rate, optical energy gap, bonded hydrogen and the sp2 content in the films were obtained from the optical transmission and Fourier transform infrared (FTIR) of the films. The growth rate, hydrogen content and optical energy gap were found to be strongly dependent on rf power. The higher rf power reduced hydrogen content in the film which resulted in increase in sp2 content in the film structure with increase in film thickness. The optical energy gap decreased with increase in film thickness for both the higher and lower rf power films.</description><issn>0094-243X</issn><isbn>9780735404175</isbn><isbn>0735404178</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2007</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotjktPwkAYRSdRExFZ-A9m5a44r85jSSoICYnEoHFHhulXqJaZOtPG-O8t0dVd3HtOLkJ3lEwpkfyBTpniRnNzgSZGaaJ4LoigKr9EI0KMyJjg79foJqUPQphRSo_QYeWrpgfvAIcKb8I3RGx9iRd1c8LbY-0-PaSEg8fdEfAmhhZiV0M6r18GYF68PeLlTxnDAbztoMSzU4jtMfQJFzbuB_CsSrfoqrJNgsl_jtHrYr4tltn6-WlVzNZZS7XsMqZzSZkULNdgnWJ7IyXjwlGyJ5I4a11Zkso4yWVFnFKO5SVY5YZWWAk5H6P7P28bw1cPqdud6uSgaayH4dOOGW2oMJz_AtdgWWs</recordid><startdate>20070101</startdate><enddate>20070101</enddate><creator>Awang, Rozidawati</creator><creator>Rahman, Saadah A</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20070101</creationdate><title>Influence of Power and Film Thickness on the Properties of Rf PECVD Hydrogenated Amorphous Carbon Films</title><author>Awang, Rozidawati ; Rahman, Saadah A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p186t-28561264258eac72b966234c10b060caacdd0f9c636f0c77c25dea7cb064a6e53</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Awang, Rozidawati</creatorcontrib><creatorcontrib>Rahman, Saadah A</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Awang, Rozidawati</au><au>Rahman, Saadah A</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Influence of Power and Film Thickness on the Properties of Rf PECVD Hydrogenated Amorphous Carbon Films</atitle><btitle>Solid State Science and Technology (AIP Conference Proceedings Volume 909)</btitle><date>2007-01-01</date><risdate>2007</risdate><volume>909</volume><spage>133</spage><epage>136</epage><pages>133-136</pages><issn>0094-243X</issn><isbn>9780735404175</isbn><isbn>0735404178</isbn><abstract>Two sets of hydrogenated amorphous carbon (a-C:H) films were deposited with different thicknesses at rf powers of 15 W and 50 W by varying the deposition time from the rf discharge of pure methane using our home-built plasma enhanced chemical vapour deposition (PECVD) system. The growth rate, optical energy gap, bonded hydrogen and the sp2 content in the films were obtained from the optical transmission and Fourier transform infrared (FTIR) of the films. The growth rate, hydrogen content and optical energy gap were found to be strongly dependent on rf power. The higher rf power reduced hydrogen content in the film which resulted in increase in sp2 content in the film structure with increase in film thickness. The optical energy gap decreased with increase in film thickness for both the higher and lower rf power films.</abstract><doi>10.1063/1.2739839</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0094-243X
ispartof Solid State Science and Technology (AIP Conference Proceedings Volume 909), 2007, Vol.909, p.133-136
issn 0094-243X
language eng
recordid cdi_proquest_miscellaneous_29891493
source AIP Journals Complete
title Influence of Power and Film Thickness on the Properties of Rf PECVD Hydrogenated Amorphous Carbon Films
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T05%3A25%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Influence%20of%20Power%20and%20Film%20Thickness%20on%20the%20Properties%20of%20Rf%20PECVD%20Hydrogenated%20Amorphous%20Carbon%20Films&rft.btitle=Solid%20State%20Science%20and%20Technology%20(AIP%20Conference%20Proceedings%20Volume%20909)&rft.au=Awang,%20Rozidawati&rft.date=2007-01-01&rft.volume=909&rft.spage=133&rft.epage=136&rft.pages=133-136&rft.issn=0094-243X&rft.isbn=9780735404175&rft.isbn_list=0735404178&rft_id=info:doi/10.1063/1.2739839&rft_dat=%3Cproquest%3E29891493%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=29891493&rft_id=info:pmid/&rfr_iscdi=true