Epitaxial Stabilization of a New Multiferroic Hexagonal Phase of TbMnO3 Thin Films

Multiferroic hexagonal TbMnO3 thin films have been epitaxially stabilized on substrates with hexagonal in‐plane symmetry by pulsed laser deposition. The hexagonal TbMnO3 films show ferroelectricity below ca. 60 K with a remnant polarization 20 times larger compared to its orthorhombic bulk phase. In...

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Veröffentlicht in:Advanced materials (Weinheim) 2006-12, Vol.18 (23), p.3125-3129
Hauptverfasser: Lee, J.-H., Murugavel, P., Ryu, H., Lee, D., Jo, J. Y., Kim, J. W., Kim, H. J., Kim, K. H., Jo, Y., Jung, M.-H., Oh, Y. H., Kim, Y.-W., Yoon, J.-G., Chung, J.-S., Noh, T. W.
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Sprache:eng
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Zusammenfassung:Multiferroic hexagonal TbMnO3 thin films have been epitaxially stabilized on substrates with hexagonal in‐plane symmetry by pulsed laser deposition. The hexagonal TbMnO3 films show ferroelectricity below ca. 60 K with a remnant polarization 20 times larger compared to its orthorhombic bulk phase. In addition, these samples show an electric‐field‐induced antiferroelectric‐to‐ferroelectric phase transition.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200601621