Epitaxial Stabilization of a New Multiferroic Hexagonal Phase of TbMnO3 Thin Films
Multiferroic hexagonal TbMnO3 thin films have been epitaxially stabilized on substrates with hexagonal in‐plane symmetry by pulsed laser deposition. The hexagonal TbMnO3 films show ferroelectricity below ca. 60 K with a remnant polarization 20 times larger compared to its orthorhombic bulk phase. In...
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Veröffentlicht in: | Advanced materials (Weinheim) 2006-12, Vol.18 (23), p.3125-3129 |
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creator | Lee, J.-H. Murugavel, P. Ryu, H. Lee, D. Jo, J. Y. Kim, J. W. Kim, H. J. Kim, K. H. Jo, Y. Jung, M.-H. Oh, Y. H. Kim, Y.-W. Yoon, J.-G. Chung, J.-S. Noh, T. W. |
description | Multiferroic hexagonal TbMnO3 thin films have been epitaxially stabilized on substrates with hexagonal in‐plane symmetry by pulsed laser deposition. The hexagonal TbMnO3 films show ferroelectricity below ca. 60 K with a remnant polarization 20 times larger compared to its orthorhombic bulk phase. In addition, these samples show an electric‐field‐induced antiferroelectric‐to‐ferroelectric phase transition. |
doi_str_mv | 10.1002/adma.200601621 |
format | Article |
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Y. ; Kim, J. W. ; Kim, H. J. ; Kim, K. H. ; Jo, Y. ; Jung, M.-H. ; Oh, Y. H. ; Kim, Y.-W. ; Yoon, J.-G. ; Chung, J.-S. ; Noh, T. W.</creator><creatorcontrib>Lee, J.-H. ; Murugavel, P. ; Ryu, H. ; Lee, D. ; Jo, J. Y. ; Kim, J. W. ; Kim, H. J. ; Kim, K. H. ; Jo, Y. ; Jung, M.-H. ; Oh, Y. H. ; Kim, Y.-W. ; Yoon, J.-G. ; Chung, J.-S. ; Noh, T. W.</creatorcontrib><description>Multiferroic hexagonal TbMnO3 thin films have been epitaxially stabilized on substrates with hexagonal in‐plane symmetry by pulsed laser deposition. The hexagonal TbMnO3 films show ferroelectricity below ca. 60 K with a remnant polarization 20 times larger compared to its orthorhombic bulk phase. In addition, these samples show an electric‐field‐induced antiferroelectric‐to‐ferroelectric phase transition.</description><identifier>ISSN: 0935-9648</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.200601621</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>Antiferromagnetism ; Ferroelectric materials ; Ferromagnetic materials ; Magnetic materials ; Thin films</subject><ispartof>Advanced materials (Weinheim), 2006-12, Vol.18 (23), p.3125-3129</ispartof><rights>Copyright © 2006 WILEY‐VCH Verlag GmbH & Co. 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In addition, these samples show an electric‐field‐induced antiferroelectric‐to‐ferroelectric phase transition.</description><subject>Antiferromagnetism</subject><subject>Ferroelectric materials</subject><subject>Ferromagnetic materials</subject><subject>Magnetic materials</subject><subject>Thin films</subject><issn>0935-9648</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNo9kM9PwjAUxxujiYhePe_kbfjarut6JMjAhF9R1GPz2Dqplg3XEcC_XgiG08tLPp_v4UPIPYUOBWCPmK-wwwBioDGjF6RFBaNhBEpckhYoLkIVR8k1ufH-CwBUDHGLvPTXtsGdRRe8Nriwzv5iY6syqIoAg4nZBuONa2xh6rqyWTA0O_ysygM9W6I3R2q-GJdTHsyXtgxS61b-llwV6Ly5-79t8pb2571hOJoOnnvdUWiZBBoaAbnIWKIgUjLJGc05UGOQoigkY4VggsscacaFNBHlmEGSoSwiiYIlIudt8nDaXdfVz8b4Rq-sz4xzWJpq4zVTQsWU0wOoTuDWOrPX69qusN5rCvrYTR-76XM33X0ad8_fwQ1PrvWN2Z1drL91LLkU-mMy0FH6ns6iidAp_wPqynGp</recordid><startdate>20061204</startdate><enddate>20061204</enddate><creator>Lee, J.-H.</creator><creator>Murugavel, P.</creator><creator>Ryu, H.</creator><creator>Lee, D.</creator><creator>Jo, J. 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W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial Stabilization of a New Multiferroic Hexagonal Phase of TbMnO3 Thin Films</atitle><jtitle>Advanced materials (Weinheim)</jtitle><addtitle>Adv. Mater</addtitle><date>2006-12-04</date><risdate>2006</risdate><volume>18</volume><issue>23</issue><spage>3125</spage><epage>3129</epage><pages>3125-3129</pages><issn>0935-9648</issn><eissn>1521-4095</eissn><abstract>Multiferroic hexagonal TbMnO3 thin films have been epitaxially stabilized on substrates with hexagonal in‐plane symmetry by pulsed laser deposition. The hexagonal TbMnO3 films show ferroelectricity below ca. 60 K with a remnant polarization 20 times larger compared to its orthorhombic bulk phase. In addition, these samples show an electric‐field‐induced antiferroelectric‐to‐ferroelectric phase transition.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/adma.200601621</doi><tpages>5</tpages></addata></record> |
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subjects | Antiferromagnetism Ferroelectric materials Ferromagnetic materials Magnetic materials Thin films |
title | Epitaxial Stabilization of a New Multiferroic Hexagonal Phase of TbMnO3 Thin Films |
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