MOVPE grown Ga1−xInxAs solar cells for GaInP/GaInAs tandem applications
Lattice-mismatched Ga1-xInxAs solar cells with an absorption edge between 900 and 1150 nm have been grown on GaAs substrates. Different graded Ga1-xInxAs buffer layers and solar cell structures were evaluated to achieve a good electrical performance of the device. External quantum efficiencies compa...
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Veröffentlicht in: | Journal of electronic materials 2000-01, Vol.29 (1), p.42-46 |
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creator | Dimroth, F. Lanyi, P. Schubert, U. Bett, A. W. |
description | Lattice-mismatched Ga1-xInxAs solar cells with an absorption edge between 900 and 1150 nm have been grown on GaAs substrates. Different graded Ga1-xInxAs buffer layers and solar cell structures were evaluated to achieve a good electrical performance of the device. External quantum efficiencies comparable to our best GaAs solar cells were measured. The best 1 cm2 cell with a bandgap energy of 1.18 eV has an efficiency of 22.6% at AM1.5g and a short circuit current density of 36.4 mA/cm2. This is the highest reported efficiency for a Ga0.83In0.17As solar cell. 13 refs. |
doi_str_mv | 10.1007/s11664-000-0092-6 |
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title | MOVPE grown Ga1−xInxAs solar cells for GaInP/GaInAs tandem applications |
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