MOVPE grown Ga1−xInxAs solar cells for GaInP/GaInAs tandem applications
Lattice-mismatched Ga1-xInxAs solar cells with an absorption edge between 900 and 1150 nm have been grown on GaAs substrates. Different graded Ga1-xInxAs buffer layers and solar cell structures were evaluated to achieve a good electrical performance of the device. External quantum efficiencies compa...
Gespeichert in:
| Veröffentlicht in: | Journal of electronic materials 2000-01, Vol.29 (1), p.42-46 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | Lattice-mismatched Ga1-xInxAs solar cells with an absorption edge between 900 and 1150 nm have been grown on GaAs substrates. Different graded Ga1-xInxAs buffer layers and solar cell structures were evaluated to achieve a good electrical performance of the device. External quantum efficiencies comparable to our best GaAs solar cells were measured. The best 1 cm2 cell with a bandgap energy of 1.18 eV has an efficiency of 22.6% at AM1.5g and a short circuit current density of 36.4 mA/cm2. This is the highest reported efficiency for a Ga0.83In0.17As solar cell. 13 refs. |
|---|---|
| ISSN: | 0361-5235 1543-186X |
| DOI: | 10.1007/s11664-000-0092-6 |