Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometry
Visible-near-IR spectrophotometry was combined with single-wavelength beam profile reflectometry to measure all six layer thicknesses of a silicon on oxide film stack. The spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust...
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Veröffentlicht in: | Thin solid films 1998-02, Vol.313 (1-2), p.270-275 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Visible-near-IR spectrophotometry was combined with single-wavelength beam profile reflectometry to measure all six layer thicknesses of a silicon on oxide film stack. The spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust measurement recipe required a new global optimization method working in parameter spaces of up to 12 parameters. The recipe obtained was applied to a 50-site mapping of the wafer. We found excellent agreement between our optical measurement results and scanning electron micrograph (SEM) data for all thicknesses. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/S0040-6090(97)00831-6 |