Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometry

Visible-near-IR spectrophotometry was combined with single-wavelength beam profile reflectometry to measure all six layer thicknesses of a silicon on oxide film stack. The spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust...

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Veröffentlicht in:Thin solid films 1998-02, Vol.313 (1-2), p.270-275
Hauptverfasser: Leng, J.M., Sidorowich, J.J., Senko, M., Opsal, J.
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Sprache:eng
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Zusammenfassung:Visible-near-IR spectrophotometry was combined with single-wavelength beam profile reflectometry to measure all six layer thicknesses of a silicon on oxide film stack. The spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust measurement recipe required a new global optimization method working in parameter spaces of up to 12 parameters. The recipe obtained was applied to a 50-site mapping of the wafer. We found excellent agreement between our optical measurement results and scanning electron micrograph (SEM) data for all thicknesses.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(97)00831-6