Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometry

Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometry

Visible-near-IR spectrophotometry was combined with single-wavelength beam profile reflectometry to measure all six layer thicknesses of a silicon on oxide film stack. The spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust...

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Veröffentlicht in:Thin solid films 1998-02, Vol.313 (1-2), p.270-275
Hauptverfasser: Leng, J.M., Sidorowich, J.J., Senko, M., Opsal, J.
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Sprache:eng
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Beam profile reflectometry
Global optimization
Silicon on insulator
Spectrophotometry
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container_issue 1-2
container_start_page 270
container_title Thin solid films
container_volume 313
creator Leng, J.M.
Sidorowich, J.J.
Senko, M.
Opsal, J.
description Visible-near-IR spectrophotometry was combined with single-wavelength beam profile reflectometry to measure all six layer thicknesses of a silicon on oxide film stack. The spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust measurement recipe required a new global optimization method working in parameter spaces of up to 12 parameters. The recipe obtained was applied to a 50-site mapping of the wafer. We found excellent agreement between our optical measurement results and scanning electron micrograph (SEM) data for all thicknesses.
doi_str_mv 10.1016/S0040-6090(97)00831-6
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_26785744</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609097008316</els_id><sourcerecordid>26785744</sourcerecordid><originalsourceid>FETCH-LOGICAL-c340t-5045be28e79744e50d27f0a8e5f868965502fdc0c19d951f958cfbcc01e8e42d3</originalsourceid><addsrcrecordid>eNqFkdFqFTEQhoMoeGx9BCFXohdbJ7ub3eRKpFRbKAitvQ452UkbzSbHJHv0vE8f1JyueCsMDAPf_zMzPyFvGJwxYMOHW4AemgEkvJPjewDRsWZ4RjZMjLJpx449J5t_yEvyKufvAMDattuQx1s3L77ogHHJdEadl4QzhkKjpdn9pl4fMGXqAtV19s7EQGu5kBevS0zUOj_TXLT5QZfswj3du-y2HpuAOjVXNzTv0JQUdw-xxBlLOlAdJnpEK_RL79FjuC8PdIt6prsUqyHShNZX2So4JS-s9hlf_-0n5O7zxbfzy-b665er80_Xjel6KA2Hnm-xFTjKse-Rw9SOFrRAbsUg5MA5tHYyYJicJGdWcmHs1hhgKLBvp-6EvF196xY_F8xFzS4b9H59j2qHUfBqXUG-gibFnOuuapfcrNNBMVDHTNRTJur4cCVH9ZSJGqru46rDesXeYVLZOAwGJ5fqtWqK7j8OfwA185ie</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26785744</pqid></control><display><type>article</type><title>Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometry</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Leng, J.M. ; Sidorowich, J.J. ; Senko, M. ; Opsal, J.</creator><creatorcontrib>Leng, J.M. ; Sidorowich, J.J. ; Senko, M. ; Opsal, J.</creatorcontrib><description>Visible-near-IR spectrophotometry was combined with single-wavelength beam profile reflectometry to measure all six layer thicknesses of a silicon on oxide film stack. The spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust measurement recipe required a new global optimization method working in parameter spaces of up to 12 parameters. The recipe obtained was applied to a 50-site mapping of the wafer. We found excellent agreement between our optical measurement results and scanning electron micrograph (SEM) data for all thicknesses.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/S0040-6090(97)00831-6</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Beam profile reflectometry ; Global optimization ; Silicon on insulator ; Spectrophotometry</subject><ispartof>Thin solid films, 1998-02, Vol.313 (1-2), p.270-275</ispartof><rights>1998 Elsevier Science S.A.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-5045be28e79744e50d27f0a8e5f868965502fdc0c19d951f958cfbcc01e8e42d3</citedby><cites>FETCH-LOGICAL-c340t-5045be28e79744e50d27f0a8e5f868965502fdc0c19d951f958cfbcc01e8e42d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0040-6090(97)00831-6$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Leng, J.M.</creatorcontrib><creatorcontrib>Sidorowich, J.J.</creatorcontrib><creatorcontrib>Senko, M.</creatorcontrib><creatorcontrib>Opsal, J.</creatorcontrib><title>Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometry</title><title>Thin solid films</title><description>Visible-near-IR spectrophotometry was combined with single-wavelength beam profile reflectometry to measure all six layer thicknesses of a silicon on oxide film stack. The spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust measurement recipe required a new global optimization method working in parameter spaces of up to 12 parameters. The recipe obtained was applied to a 50-site mapping of the wafer. We found excellent agreement between our optical measurement results and scanning electron micrograph (SEM) data for all thicknesses.</description><subject>Beam profile reflectometry</subject><subject>Global optimization</subject><subject>Silicon on insulator</subject><subject>Spectrophotometry</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNqFkdFqFTEQhoMoeGx9BCFXohdbJ7ub3eRKpFRbKAitvQ452UkbzSbHJHv0vE8f1JyueCsMDAPf_zMzPyFvGJwxYMOHW4AemgEkvJPjewDRsWZ4RjZMjLJpx449J5t_yEvyKufvAMDattuQx1s3L77ogHHJdEadl4QzhkKjpdn9pl4fMGXqAtV19s7EQGu5kBevS0zUOj_TXLT5QZfswj3du-y2HpuAOjVXNzTv0JQUdw-xxBlLOlAdJnpEK_RL79FjuC8PdIt6prsUqyHShNZX2So4JS-s9hlf_-0n5O7zxbfzy-b665er80_Xjel6KA2Hnm-xFTjKse-Rw9SOFrRAbsUg5MA5tHYyYJicJGdWcmHs1hhgKLBvp-6EvF196xY_F8xFzS4b9H59j2qHUfBqXUG-gibFnOuuapfcrNNBMVDHTNRTJur4cCVH9ZSJGqru46rDesXeYVLZOAwGJ5fqtWqK7j8OfwA185ie</recordid><startdate>19980201</startdate><enddate>19980201</enddate><creator>Leng, J.M.</creator><creator>Sidorowich, J.J.</creator><creator>Senko, M.</creator><creator>Opsal, J.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19980201</creationdate><title>Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometry</title><author>Leng, J.M. ; Sidorowich, J.J. ; Senko, M. ; Opsal, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-5045be28e79744e50d27f0a8e5f868965502fdc0c19d951f958cfbcc01e8e42d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Beam profile reflectometry</topic><topic>Global optimization</topic><topic>Silicon on insulator</topic><topic>Spectrophotometry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Leng, J.M.</creatorcontrib><creatorcontrib>Sidorowich, J.J.</creatorcontrib><creatorcontrib>Senko, M.</creatorcontrib><creatorcontrib>Opsal, J.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Leng, J.M.</au><au>Sidorowich, J.J.</au><au>Senko, M.</au><au>Opsal, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometry</atitle><jtitle>Thin solid films</jtitle><date>1998-02-01</date><risdate>1998</risdate><volume>313</volume><issue>1-2</issue><spage>270</spage><epage>275</epage><pages>270-275</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><abstract>Visible-near-IR spectrophotometry was combined with single-wavelength beam profile reflectometry to measure all six layer thicknesses of a silicon on oxide film stack. The spectrometer or beam profile reflectometer alone is insufficient to solve such a complicated film stack. Development of a robust measurement recipe required a new global optimization method working in parameter spaces of up to 12 parameters. The recipe obtained was applied to a 50-site mapping of the wafer. We found excellent agreement between our optical measurement results and scanning electron micrograph (SEM) data for all thicknesses.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0040-6090(97)00831-6</doi><tpages>6</tpages></addata></record>
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subjects Beam profile reflectometry
Global optimization
Silicon on insulator
Spectrophotometry
title Simultaneous measurement of six layers in a silicon on insulator film stack using visible-near-IR spectrophotometry and single-wavelength beam profile reflectometry
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T04%3A11%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Simultaneous%20measurement%20of%20six%20layers%20in%20a%20silicon%20on%20insulator%20film%20stack%20using%20visible-near-IR%20spectrophotometry%20and%20single-wavelength%20beam%20profile%20reflectometry&rft.jtitle=Thin%20solid%20films&rft.au=Leng,%20J.M.&rft.date=1998-02-01&rft.volume=313&rft.issue=1-2&rft.spage=270&rft.epage=275&rft.pages=270-275&rft.issn=0040-6090&rft.eissn=1879-2731&rft_id=info:doi/10.1016/S0040-6090(97)00831-6&rft_dat=%3Cproquest_cross%3E26785744%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=26785744&rft_id=info:pmid/&rft_els_id=S0040609097008316&rfr_iscdi=true