Synthesis and characterization of InGaAs nanowires grown by MOCVD

Semiconductor nanowires have been intensively investigated in order to study their unique fundamental and application properties that develop at the nano-scale. One of main problems in the growth of III-V semiconductor nanowire is uniformity both of in dimension and composition of chemical elements....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physics. Conference series 2013-01, Vol.423 (1), p.12047-5
Hauptverfasser: Gustiono, D, Wibowo, E, Othaman, Z
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!