Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors

[Display omitted] ► We developed a new dielectric for OFETs based on thiol-ene polymers. ► Thiol-ene systems cured within seconds under UV-irradiation. ► Organic field effect transistors based on thiol-ene polymers showed high performance. We report the synthesis and properties of fast photo-cured p...

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Veröffentlicht in:Microelectronic engineering 2013-05, Vol.105, p.74-76
Hauptverfasser: Fahem, Zied, Bauhofer, Wolfgang
Format: Artikel
Sprache:eng
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Zusammenfassung:[Display omitted] ► We developed a new dielectric for OFETs based on thiol-ene polymers. ► Thiol-ene systems cured within seconds under UV-irradiation. ► Organic field effect transistors based on thiol-ene polymers showed high performance. We report the synthesis and properties of fast photo-cured polymer dielectrics used as top gate insulators in organic field-effect transistors (OFETs). Two thiol functionalized compounds and a vinyl ether monomer were used to formulate thiol-ene polymers. The kinetic of the photo-curing of these formulations was determined by monitoring the curing process by FT-IR spectroscopy. Guided by measurements on metal–insulator–metal and metal–insulator–semiconductor structures, we determined the composition of the thiol-ene polymer and the optimal time of exposure to UV-irradiation to fabricate high performance poly(3-hexylthiophene)-based OFETs. We cured a mixture of a mercapto-functionalized polysiloxane produced with sol–gel process, 1,4-cyclohexanedimethanol divinyl ether and irgacure 127 in 15s. The produced transistors have high on/off ratios of 105. The OFETs showed a field effect mobility of 10−2cm2V−1s−1 and low threshold voltage of −3V.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2012.12.022