Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors
[Display omitted] ► We developed a new dielectric for OFETs based on thiol-ene polymers. ► Thiol-ene systems cured within seconds under UV-irradiation. ► Organic field effect transistors based on thiol-ene polymers showed high performance. We report the synthesis and properties of fast photo-cured p...
Gespeichert in:
Veröffentlicht in: | Microelectronic engineering 2013-05, Vol.105, p.74-76 |
---|---|
Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | [Display omitted]
► We developed a new dielectric for OFETs based on thiol-ene polymers. ► Thiol-ene systems cured within seconds under UV-irradiation. ► Organic field effect transistors based on thiol-ene polymers showed high performance.
We report the synthesis and properties of fast photo-cured polymer dielectrics used as top gate insulators in organic field-effect transistors (OFETs). Two thiol functionalized compounds and a vinyl ether monomer were used to formulate thiol-ene polymers. The kinetic of the photo-curing of these formulations was determined by monitoring the curing process by FT-IR spectroscopy. Guided by measurements on metal–insulator–metal and metal–insulator–semiconductor structures, we determined the composition of the thiol-ene polymer and the optimal time of exposure to UV-irradiation to fabricate high performance poly(3-hexylthiophene)-based OFETs. We cured a mixture of a mercapto-functionalized polysiloxane produced with sol–gel process, 1,4-cyclohexanedimethanol divinyl ether and irgacure 127 in 15s. The produced transistors have high on/off ratios of 105. The OFETs showed a field effect mobility of 10−2cm2V−1s−1 and low threshold voltage of −3V. |
---|---|
ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2012.12.022 |