Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors
[Display omitted] ► We developed a new dielectric for OFETs based on thiol-ene polymers. ► Thiol-ene systems cured within seconds under UV-irradiation. ► Organic field effect transistors based on thiol-ene polymers showed high performance. We report the synthesis and properties of fast photo-cured p...
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| Veröffentlicht in: | Microelectronic engineering 2013-05, Vol.105, p.74-76 |
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| container_title | Microelectronic engineering |
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| creator | Fahem, Zied Bauhofer, Wolfgang |
| description | [Display omitted]
► We developed a new dielectric for OFETs based on thiol-ene polymers. ► Thiol-ene systems cured within seconds under UV-irradiation. ► Organic field effect transistors based on thiol-ene polymers showed high performance.
We report the synthesis and properties of fast photo-cured polymer dielectrics used as top gate insulators in organic field-effect transistors (OFETs). Two thiol functionalized compounds and a vinyl ether monomer were used to formulate thiol-ene polymers. The kinetic of the photo-curing of these formulations was determined by monitoring the curing process by FT-IR spectroscopy. Guided by measurements on metal–insulator–metal and metal–insulator–semiconductor structures, we determined the composition of the thiol-ene polymer and the optimal time of exposure to UV-irradiation to fabricate high performance poly(3-hexylthiophene)-based OFETs. We cured a mixture of a mercapto-functionalized polysiloxane produced with sol–gel process, 1,4-cyclohexanedimethanol divinyl ether and irgacure 127 in 15s. The produced transistors have high on/off ratios of 105. The OFETs showed a field effect mobility of 10−2cm2V−1s−1 and low threshold voltage of −3V. |
| doi_str_mv | 10.1016/j.mee.2012.12.022 |
| format | Article |
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► We developed a new dielectric for OFETs based on thiol-ene polymers. ► Thiol-ene systems cured within seconds under UV-irradiation. ► Organic field effect transistors based on thiol-ene polymers showed high performance.
We report the synthesis and properties of fast photo-cured polymer dielectrics used as top gate insulators in organic field-effect transistors (OFETs). Two thiol functionalized compounds and a vinyl ether monomer were used to formulate thiol-ene polymers. The kinetic of the photo-curing of these formulations was determined by monitoring the curing process by FT-IR spectroscopy. Guided by measurements on metal–insulator–metal and metal–insulator–semiconductor structures, we determined the composition of the thiol-ene polymer and the optimal time of exposure to UV-irradiation to fabricate high performance poly(3-hexylthiophene)-based OFETs. We cured a mixture of a mercapto-functionalized polysiloxane produced with sol–gel process, 1,4-cyclohexanedimethanol divinyl ether and irgacure 127 in 15s. The produced transistors have high on/off ratios of 105. The OFETs showed a field effect mobility of 10−2cm2V−1s−1 and low threshold voltage of −3V.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2012.12.022</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Compound structure devices ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Curing ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Electronics ; Exact sciences and technology ; Field effect transistors ; Gate dielectric ; Gates ; Insulator ; Insulators ; Metal-insulator-semiconductor structures (including semiconductor-to-insulator) ; Metal-nonmetal contacts ; Organic field-effect transistors ; Photo-curing ; Physics ; Polysiloxanes ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Thiol-ene ; Threshold voltage ; Transistors</subject><ispartof>Microelectronic engineering, 2013-05, Vol.105, p.74-76</ispartof><rights>2013 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c426t-26ecc230dda689a4735091f7bd521724eb735b722045263945d7341974c68e883</citedby><cites>FETCH-LOGICAL-c426t-26ecc230dda689a4735091f7bd521724eb735b722045263945d7341974c68e883</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167931713000063$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65534</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27125100$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Fahem, Zied</creatorcontrib><creatorcontrib>Bauhofer, Wolfgang</creatorcontrib><title>Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors</title><title>Microelectronic engineering</title><description>[Display omitted]
► We developed a new dielectric for OFETs based on thiol-ene polymers. ► Thiol-ene systems cured within seconds under UV-irradiation. ► Organic field effect transistors based on thiol-ene polymers showed high performance.
We report the synthesis and properties of fast photo-cured polymer dielectrics used as top gate insulators in organic field-effect transistors (OFETs). Two thiol functionalized compounds and a vinyl ether monomer were used to formulate thiol-ene polymers. The kinetic of the photo-curing of these formulations was determined by monitoring the curing process by FT-IR spectroscopy. Guided by measurements on metal–insulator–metal and metal–insulator–semiconductor structures, we determined the composition of the thiol-ene polymer and the optimal time of exposure to UV-irradiation to fabricate high performance poly(3-hexylthiophene)-based OFETs. We cured a mixture of a mercapto-functionalized polysiloxane produced with sol–gel process, 1,4-cyclohexanedimethanol divinyl ether and irgacure 127 in 15s. The produced transistors have high on/off ratios of 105. The OFETs showed a field effect mobility of 10−2cm2V−1s−1 and low threshold voltage of −3V.</description><subject>Applied sciences</subject><subject>Compound structure devices</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Curing</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport in interface structures</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Field effect transistors</subject><subject>Gate dielectric</subject><subject>Gates</subject><subject>Insulator</subject><subject>Insulators</subject><subject>Metal-insulator-semiconductor structures (including semiconductor-to-insulator)</subject><subject>Metal-nonmetal contacts</subject><subject>Organic field-effect transistors</subject><subject>Photo-curing</subject><subject>Physics</subject><subject>Polysiloxanes</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Thiol-ene</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kMFqGzEQQEVJoE7SD-hNl0Iv62i0q9UuPRWTpAFDL-61Qqsd2TLyytWsC_n7ytjkWBghZngzwzzGPoNYgoD2cb88IC6lALksIaT8wBbQ6bpSqu1u2KIwuupr0B_ZHdFelLwR3YL93uxCihVOyI8pvh0w88ESjtxbmvlxl-ZUuVO2Q0S-tTPyMNEp2jll7stLeWun4LgPGEeO3qOb-ZztRIEKQw_s1ttI-On637Nfz0-b1Y9q_fPldfV9XblGtnMlW3RO1mIcbdv1ttG1Ej14PYxKgpYNDqUyaClFo2Rb940add1ArxvXdth19T37epl7zOnPCWk2h0AOY7QTphMZqFsFoKDvCwoX1OVElNGbYw4Hm98MCHN2afamuDRnl6ZEcVl6vlzHW3I2-nKgC_TeKDVIBUIU7tuFw3Lr34DZkAs4ORxDLmbMmMJ_tvwDUdWIpg</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Fahem, Zied</creator><creator>Bauhofer, Wolfgang</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20130501</creationdate><title>Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors</title><author>Fahem, Zied ; Bauhofer, Wolfgang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-26ecc230dda689a4735091f7bd521724eb735b722045263945d7341974c68e883</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Compound structure devices</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Curing</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport in interface structures</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Field effect transistors</topic><topic>Gate dielectric</topic><topic>Gates</topic><topic>Insulator</topic><topic>Insulators</topic><topic>Metal-insulator-semiconductor structures (including semiconductor-to-insulator)</topic><topic>Metal-nonmetal contacts</topic><topic>Organic field-effect transistors</topic><topic>Photo-curing</topic><topic>Physics</topic><topic>Polysiloxanes</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Thiol-ene</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fahem, Zied</creatorcontrib><creatorcontrib>Bauhofer, Wolfgang</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fahem, Zied</au><au>Bauhofer, Wolfgang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors</atitle><jtitle>Microelectronic engineering</jtitle><date>2013-05-01</date><risdate>2013</risdate><volume>105</volume><spage>74</spage><epage>76</epage><pages>74-76</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>[Display omitted]
► We developed a new dielectric for OFETs based on thiol-ene polymers. ► Thiol-ene systems cured within seconds under UV-irradiation. ► Organic field effect transistors based on thiol-ene polymers showed high performance.
We report the synthesis and properties of fast photo-cured polymer dielectrics used as top gate insulators in organic field-effect transistors (OFETs). Two thiol functionalized compounds and a vinyl ether monomer were used to formulate thiol-ene polymers. The kinetic of the photo-curing of these formulations was determined by monitoring the curing process by FT-IR spectroscopy. Guided by measurements on metal–insulator–metal and metal–insulator–semiconductor structures, we determined the composition of the thiol-ene polymer and the optimal time of exposure to UV-irradiation to fabricate high performance poly(3-hexylthiophene)-based OFETs. We cured a mixture of a mercapto-functionalized polysiloxane produced with sol–gel process, 1,4-cyclohexanedimethanol divinyl ether and irgacure 127 in 15s. The produced transistors have high on/off ratios of 105. The OFETs showed a field effect mobility of 10−2cm2V−1s−1 and low threshold voltage of −3V.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2012.12.022</doi><tpages>3</tpages></addata></record> |
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| ispartof | Microelectronic engineering, 2013-05, Vol.105, p.74-76 |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Compound structure devices Condensed matter: electronic structure, electrical, magnetic, and optical properties Curing Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronics Exact sciences and technology Field effect transistors Gate dielectric Gates Insulator Insulators Metal-insulator-semiconductor structures (including semiconductor-to-insulator) Metal-nonmetal contacts Organic field-effect transistors Photo-curing Physics Polysiloxanes Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Thiol-ene Threshold voltage Transistors |
| title | Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors |
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