On the parasitic capacitances of multilevel skewed metallization lines

Using the method of moments solution technique, the charge distributions induced on skewed metallization lines are obtained. The capacitance between the lines is obtained for typical cross-over configurations. Additionally, end effects are considered in detail.

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Veröffentlicht in:IEEE transactions on electron devices 1986-01, Vol.33 (1), p.41-46
Hauptverfasser: Taylor, C.D., Elkhouri, G.N., Wade, T.E.
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container_title IEEE transactions on electron devices
container_volume 33
creator Taylor, C.D.
Elkhouri, G.N.
Wade, T.E.
description Using the method of moments solution technique, the charge distributions induced on skewed metallization lines are obtained. The capacitance between the lines is obtained for typical cross-over configurations. Additionally, end effects are considered in detail.
doi_str_mv 10.1109/T-ED.1986.22434
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subjects Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title On the parasitic capacitances of multilevel skewed metallization lines
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