On the parasitic capacitances of multilevel skewed metallization lines
Using the method of moments solution technique, the charge distributions induced on skewed metallization lines are obtained. The capacitance between the lines is obtained for typical cross-over configurations. Additionally, end effects are considered in detail.
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Veröffentlicht in: | IEEE transactions on electron devices 1986-01, Vol.33 (1), p.41-46 |
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container_title | IEEE transactions on electron devices |
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creator | Taylor, C.D. Elkhouri, G.N. Wade, T.E. |
description | Using the method of moments solution technique, the charge distributions induced on skewed metallization lines are obtained. The capacitance between the lines is obtained for typical cross-over configurations. Additionally, end effects are considered in detail. |
doi_str_mv | 10.1109/T-ED.1986.22434 |
format | Article |
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Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Taylor, C.D.</creatorcontrib><creatorcontrib>Elkhouri, G.N.</creatorcontrib><creatorcontrib>Wade, T.E.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Taylor, C.D.</au><au>Elkhouri, G.N.</au><au>Wade, T.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the parasitic capacitances of multilevel skewed metallization lines</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1986-01</date><risdate>1986</risdate><volume>33</volume><issue>1</issue><spage>41</spage><epage>46</epage><pages>41-46</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Using the method of moments solution technique, the charge distributions induced on skewed metallization lines are obtained. The capacitance between the lines is obtained for typical cross-over configurations. Additionally, end effects are considered in detail.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/T-ED.1986.22434</doi><tpages>6</tpages></addata></record> |
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ispartof | IEEE transactions on electron devices, 1986-01, Vol.33 (1), p.41-46 |
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source | IEEE Electronic Library (IEL) |
subjects | Applied sciences Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | On the parasitic capacitances of multilevel skewed metallization lines |
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