On the parasitic capacitances of multilevel skewed metallization lines

Using the method of moments solution technique, the charge distributions induced on skewed metallization lines are obtained. The capacitance between the lines is obtained for typical cross-over configurations. Additionally, end effects are considered in detail.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 1986-01, Vol.33 (1), p.41-46
Hauptverfasser:	Taylor, C.D., Elkhouri, G.N., Wade, T.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	Using the method of moments solution technique, the charge distributions induced on skewed metallization lines are obtained. The capacitance between the lines is obtained for typical cross-over configurations. Additionally, end effects are considered in detail.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/T-ED.1986.22434