Transient Simulation of Microwave SiC MESFETs With Improved Trap Models
Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, c...
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Veröffentlicht in: | IEEE transactions on electron devices 2010-03, Vol.57 (3), p.729-732 |
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creator | Hjelmgren, H. Allerstam, F. Andersson, K. Nilsson, P.-A. Rorsman, N. |
description | Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved. |
doi_str_mv | 10.1109/TED.2009.2039679 |
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Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved.</description><identifier>ISSN: 0018-9383</identifier><identifier>ISSN: 1557-9646</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2009.2039679</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Charge carrier processes ; Circuit properties ; Computer simulation ; Current measurement ; Devices ; Electric, optical and optoelectronic circuits ; Electron traps ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Gates ; Logic gates ; MESFET power amplifiers ; MESFETs ; Microwave and submillimeter wave devices, electron transfer devices ; microwave transistor ; Microwaves ; Semiconductor device measurement ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon carbide ; Substrates ; technology computer-aided design (TCAD) ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.729-732</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Charge carrier processes</subject><subject>Circuit properties</subject><subject>Computer simulation</subject><subject>Current measurement</subject><subject>Devices</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electron traps</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gates</subject><subject>Logic gates</subject><subject>MESFET power amplifiers</subject><subject>MESFETs</subject><subject>Microwave and submillimeter wave devices, electron transfer devices</subject><subject>microwave transistor</subject><subject>Microwaves</subject><subject>Semiconductor device measurement</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon carbide</subject><subject>Substrates</subject><subject>technology computer-aided design (TCAD)</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkUtrGzEUhYfSQNyk-0A3Q6F0Namkq-eyOG4SiOnCLl0KjeYOVpiHK80k9N9XxsaLbLqR0NV3DtxziuKGkltKifm2Xd3dMkJMPsBIZd4VCyqEqozk8n2xIITqyoCGy-JDSs_5KTlni-J-G92QAg5TuQn93LkpjEM5tuU6-Di-uhfM82W5Xm1-rLap_B2mXfnY7-P4gk2ZtftyPTbYpevionVdwo-n-6r4lQXLh-rp5_3j8vtT5bkkU1WDdwASCTA0SFzDDdHCK28ko0wh1OgbL8H4tgVBa61a8ER7ph1TMmuvis3RN73ifq7tPobexb92dMFGTOii31m_c12PMdmE1hBsG4_U1sik5Q3VtlYKrNJt4zTmIKDOrl-PrnmxPzOmyfYheew6N-A4J6uVIIxrov5LKg5KKc1EJj-_IZ_HOQ45HKuFFIYKOEDkCOWwU4rYnheixB56tblXe-jVnnrNki8nX5e869rcnw_prGOMG6AGMvfpyAVEPH8LTnLvAP8AaYypyA</recordid><startdate>20100301</startdate><enddate>20100301</enddate><creator>Hjelmgren, H.</creator><creator>Allerstam, F.</creator><creator>Andersson, K.</creator><creator>Nilsson, P.-A.</creator><creator>Rorsman, N.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gates</topic><topic>Logic gates</topic><topic>MESFET power amplifiers</topic><topic>MESFETs</topic><topic>Microwave and submillimeter wave devices, electron transfer devices</topic><topic>microwave transistor</topic><topic>Microwaves</topic><topic>Semiconductor device measurement</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. 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subjects | Amplifiers Applied sciences Charge carrier processes Circuit properties Computer simulation Current measurement Devices Electric, optical and optoelectronic circuits Electron traps Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gates Logic gates MESFET power amplifiers MESFETs Microwave and submillimeter wave devices, electron transfer devices microwave transistor Microwaves Semiconductor device measurement Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide Substrates technology computer-aided design (TCAD) Transistors |
title | Transient Simulation of Microwave SiC MESFETs With Improved Trap Models |
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