Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, c...

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Veröffentlicht in:IEEE transactions on electron devices 2010-03, Vol.57 (3), p.729-732
Hauptverfasser: Hjelmgren, H., Allerstam, F., Andersson, K., Nilsson, P.-A., Rorsman, N.
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container_title IEEE transactions on electron devices
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creator Hjelmgren, H.
Allerstam, F.
Andersson, K.
Nilsson, P.-A.
Rorsman, N.
description Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved.
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subjects Amplifiers
Applied sciences
Charge carrier processes
Circuit properties
Computer simulation
Current measurement
Devices
Electric, optical and optoelectronic circuits
Electron traps
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Gates
Logic gates
MESFET power amplifiers
MESFETs
Microwave and submillimeter wave devices, electron transfer devices
microwave transistor
Microwaves
Semiconductor device measurement
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon carbide
Substrates
technology computer-aided design (TCAD)
Transistors
title Transient Simulation of Microwave SiC MESFETs With Improved Trap Models
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