Transient Simulation of Microwave SiC MESFETs With Improved Trap Models

Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, c...

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Veröffentlicht in:	IEEE transactions on electron devices 2010-03, Vol.57 (3), p.729-732
Hauptverfasser:	Hjelmgren, H., Allerstam, F., Andersson, K., Nilsson, P.-A., Rorsman, N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Charge carrier processes Circuit properties Computer simulation Current measurement Devices Electric, optical and optoelectronic circuits Electron traps Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gates Logic gates MESFET power amplifiers MESFETs Microwave and submillimeter wave devices, electron transfer devices microwave transistor Microwaves Semiconductor device measurement Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide Substrates technology computer-aided design (TCAD) Transistors
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Beschreibung
Zusammenfassung:	Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved.
ISSN:	0018-9383 1557-9646 1557-9646
DOI:	10.1109/TED.2009.2039679