Effect of an Ultraviolet-Ozone Treatment on the Electrical Properties of Titanium-Oxide Thin-Film Transistors Fabricated by Using a Sol-Gel Process
Thin-film transistors (TFTs) utilizing titanium-oxide channel layers were fabricated by using a sol-gel process. The device characteristics of the channel layer for the TFTs were enhanced, resulting in a shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of...
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Veröffentlicht in: | Journal of the Electrochemical Society 2012-01, Vol.159 (7), p.B771-B774 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Thin-film transistors (TFTs) utilizing titanium-oxide channel layers were fabricated by using a sol-gel process. The device characteristics of the channel layer for the TFTs were enhanced, resulting in a shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the ultraviolet-ozone-treated TFTs was as large as 4.78 × 105. The surface carrier concentration of the titanium-oxide was decreased due to the decrease in the oxygen deficiency resulting from the negatively-charged oxygen. |
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ISSN: | 0013-4651 1945-7111 |
DOI: | 10.1149/2.016207jes |