Effect of an Ultraviolet-Ozone Treatment on the Electrical Properties of Titanium-Oxide Thin-Film Transistors Fabricated by Using a Sol-Gel Process

Effect of an Ultraviolet-Ozone Treatment on the Electrical Properties of Titanium-Oxide Thin-Film Transistors Fabricated by Using a Sol-Gel Process

Thin-film transistors (TFTs) utilizing titanium-oxide channel layers were fabricated by using a sol-gel process. The device characteristics of the channel layer for the TFTs were enhanced, resulting in a shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of...

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Veröffentlicht in:Journal of the Electrochemical Society 2012-01, Vol.159 (7), p.B771-B774
Hauptverfasser: Chong, Ho Yong, Lee, Se Han, Kim, Tae Whan
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container_title Journal of the Electrochemical Society
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creator Chong, Ho Yong
Lee, Se Han
Kim, Tae Whan
description Thin-film transistors (TFTs) utilizing titanium-oxide channel layers were fabricated by using a sol-gel process. The device characteristics of the channel layer for the TFTs were enhanced, resulting in a shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the ultraviolet-ozone-treated TFTs was as large as 4.78 × 105. The surface carrier concentration of the titanium-oxide was decreased due to the decrease in the oxygen deficiency resulting from the negatively-charged oxygen.
doi_str_mv 10.1149/2.016207jes
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fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_iop_journals_10_1149_2_016207jes</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>016207JES</sourcerecordid><originalsourceid>FETCH-LOGICAL-c331t-799f77e7bb8b3b8d4b236eb43c8cd58b2a96cf43c310c9becc3ccb4ebcb5e4323</originalsourceid><addsrcrecordid>eNptkM1KAzEUhYMoWKsrXyA7F5I6mWT-llI6VShUsF0PSeaOTZlJSpKK9TV8YVMrrlxdDnzf4XIQuqXJhFJePaSThOZpUmzBn6ERrXhGCkrpORolCWWE5xm9RFfeb2OkJS9G6GvWdaACth0WBq_74MS7tj0Esvy0BvDKgQgDmEgYHDaAZ33EnVaixy_O7sAFDf6or3QQRu8HsvzQbRQ32pBa90OsEMZrH6zzuBby6AZosTzgtdfmDQv8ansyh59CBd5fo4tO9B5ufu8YrevZavpEFsv58_RxQRRjNJCiqrqigELKUjJZtlymLAfJmSpVm5UyFVWuuhgZTVQlQSmmlOQglcyAs5SN0f2pVznrvYOu2Tk9CHdoaNIc92zS5m_PSN-daG13zdbunYm__Ut-A7kueKA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of an Ultraviolet-Ozone Treatment on the Electrical Properties of Titanium-Oxide Thin-Film Transistors Fabricated by Using a Sol-Gel Process</title><source>IOP Publishing Journals</source><creator>Chong, Ho Yong ; Lee, Se Han ; Kim, Tae Whan</creator><creatorcontrib>Chong, Ho Yong ; Lee, Se Han ; Kim, Tae Whan</creatorcontrib><description>Thin-film transistors (TFTs) utilizing titanium-oxide channel layers were fabricated by using a sol-gel process. The device characteristics of the channel layer for the TFTs were enhanced, resulting in a shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the ultraviolet-ozone-treated TFTs was as large as 4.78 × 105. The surface carrier concentration of the titanium-oxide was decreased due to the decrease in the oxygen deficiency resulting from the negatively-charged oxygen.</description><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/2.016207jes</identifier><language>eng</language><publisher>The Electrochemical Society</publisher><ispartof>Journal of the Electrochemical Society, 2012-01, Vol.159 (7), p.B771-B774</ispartof><rights>2012 The Electrochemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c331t-799f77e7bb8b3b8d4b236eb43c8cd58b2a96cf43c310c9becc3ccb4ebcb5e4323</citedby><cites>FETCH-LOGICAL-c331t-799f77e7bb8b3b8d4b236eb43c8cd58b2a96cf43c310c9becc3ccb4ebcb5e4323</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/2.016207jes/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821</link.rule.ids></links><search><creatorcontrib>Chong, Ho Yong</creatorcontrib><creatorcontrib>Lee, Se Han</creatorcontrib><creatorcontrib>Kim, Tae Whan</creatorcontrib><title>Effect of an Ultraviolet-Ozone Treatment on the Electrical Properties of Titanium-Oxide Thin-Film Transistors Fabricated by Using a Sol-Gel Process</title><title>Journal of the Electrochemical Society</title><addtitle>J. Electrochem. Soc</addtitle><description>Thin-film transistors (TFTs) utilizing titanium-oxide channel layers were fabricated by using a sol-gel process. The device characteristics of the channel layer for the TFTs were enhanced, resulting in a shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the ultraviolet-ozone-treated TFTs was as large as 4.78 × 105. The surface carrier concentration of the titanium-oxide was decreased due to the decrease in the oxygen deficiency resulting from the negatively-charged oxygen.</description><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNptkM1KAzEUhYMoWKsrXyA7F5I6mWT-llI6VShUsF0PSeaOTZlJSpKK9TV8YVMrrlxdDnzf4XIQuqXJhFJePaSThOZpUmzBn6ERrXhGCkrpORolCWWE5xm9RFfeb2OkJS9G6GvWdaACth0WBq_74MS7tj0Esvy0BvDKgQgDmEgYHDaAZ33EnVaixy_O7sAFDf6or3QQRu8HsvzQbRQ32pBa90OsEMZrH6zzuBby6AZosTzgtdfmDQv8ansyh59CBd5fo4tO9B5ufu8YrevZavpEFsv58_RxQRRjNJCiqrqigELKUjJZtlymLAfJmSpVm5UyFVWuuhgZTVQlQSmmlOQglcyAs5SN0f2pVznrvYOu2Tk9CHdoaNIc92zS5m_PSN-daG13zdbunYm__Ut-A7kueKA</recordid><startdate>20120101</startdate><enddate>20120101</enddate><creator>Chong, Ho Yong</creator><creator>Lee, Se Han</creator><creator>Kim, Tae Whan</creator><general>The Electrochemical Society</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120101</creationdate><title>Effect of an Ultraviolet-Ozone Treatment on the Electrical Properties of Titanium-Oxide Thin-Film Transistors Fabricated by Using a Sol-Gel Process</title><author>Chong, Ho Yong ; Lee, Se Han ; Kim, Tae Whan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c331t-799f77e7bb8b3b8d4b236eb43c8cd58b2a96cf43c310c9becc3ccb4ebcb5e4323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chong, Ho Yong</creatorcontrib><creatorcontrib>Lee, Se Han</creatorcontrib><creatorcontrib>Kim, Tae Whan</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chong, Ho Yong</au><au>Lee, Se Han</au><au>Kim, Tae Whan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of an Ultraviolet-Ozone Treatment on the Electrical Properties of Titanium-Oxide Thin-Film Transistors Fabricated by Using a Sol-Gel Process</atitle><jtitle>Journal of the Electrochemical Society</jtitle><addtitle>J. Electrochem. Soc</addtitle><date>2012-01-01</date><risdate>2012</risdate><volume>159</volume><issue>7</issue><spage>B771</spage><epage>B774</epage><pages>B771-B774</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><abstract>Thin-film transistors (TFTs) utilizing titanium-oxide channel layers were fabricated by using a sol-gel process. The device characteristics of the channel layer for the TFTs were enhanced, resulting in a shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the ultraviolet-ozone-treated TFTs was as large as 4.78 × 105. The surface carrier concentration of the titanium-oxide was decreased due to the decrease in the oxygen deficiency resulting from the negatively-charged oxygen.</abstract><pub>The Electrochemical Society</pub><doi>10.1149/2.016207jes</doi><tpages>4</tpages></addata></record>
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title Effect of an Ultraviolet-Ozone Treatment on the Electrical Properties of Titanium-Oxide Thin-Film Transistors Fabricated by Using a Sol-Gel Process
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T18%3A05%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20an%20Ultraviolet-Ozone%20Treatment%20on%20the%20Electrical%20Properties%20of%20Titanium-Oxide%20Thin-Film%20Transistors%20Fabricated%20by%20Using%20a%20Sol-Gel%20Process&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Chong,%20Ho%20Yong&rft.date=2012-01-01&rft.volume=159&rft.issue=7&rft.spage=B771&rft.epage=B774&rft.pages=B771-B774&rft.issn=0013-4651&rft.eissn=1945-7111&rft_id=info:doi/10.1149/2.016207jes&rft_dat=%3Ciop_cross%3E016207JES%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true