Promising Low Noise Amplifiers Using 90nm CMOSFET Devices

The wide availability of LNA components varying from 6.0 GHz to 30.0 GHz is delivered using TSMC 90nm CMOS processes. The voltage gains are substantially improved and the noise figures are noticeably reduced. In addition to the multiplication of gains, the multiple stages of amplifiers give the bene...

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Hauptverfasser: Hsin-Chia Yang, Jui-Ming Tsai, Jhe-Chuan Yeh, Cheng-Huang Tsao, Sungching Chi, Tsing-Yung Chang, Mu-Chun Wang
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:The wide availability of LNA components varying from 6.0 GHz to 30.0 GHz is delivered using TSMC 90nm CMOS processes. The voltage gains are substantially improved and the noise figures are noticeably reduced. In addition to the multiplication of gains, the multiple stages of amplifiers give the benefits of taking control of noise figures (NF) and approaches to the one of the pre-amplifier. Even though NF gets higher for higher RF frequencies, the suppression of minimum noise figures is to be observed.
ISSN:2161-9646
DOI:10.1109/WiCOM.2012.6478624