Promising Low Noise Amplifiers Using 90nm CMOSFET Devices

The wide availability of LNA components varying from 6.0 GHz to 30.0 GHz is delivered using TSMC 90nm CMOS processes. The voltage gains are substantially improved and the noise figures are noticeably reduced. In addition to the multiplication of gains, the multiple stages of amplifiers give the bene...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hsin-Chia Yang, Jui-Ming Tsai, Jhe-Chuan Yeh, Cheng-Huang Tsao, Sungching Chi, Tsing-Yung Chang, Mu-Chun Wang
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS integrated circuits Linearity Low-noise amplifiers Noise Noise figure Power amplifiers
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