Recovery characteristics of NBTI of pMOSFETs with oxynitride dielectrics under drain bias
In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high |V ds | region but also suppresses the recovery ratio of NBTI. The time evolutions...
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creator | Jiaqi Yang Junyan Pan Lihua Huang Xiaoyan Liu Ruqi Han Jinfeng Kang Zhang, L.F. Zhu, Z.W. Liao, C.C. Wu, H.M. |
description | In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high |V ds | region but also suppresses the recovery ratio of NBTI. The time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial 1s. While in long time scale, the recovery obeys power law dependence on time. A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias. |
doi_str_mv | 10.1109/ICSICT.2008.4734625 |
format | Conference Proceeding |
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It is observed that, the drain bias not only worsens the NBTI degradation in high |V ds | region but also suppresses the recovery ratio of NBTI. The time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial 1s. While in long time scale, the recovery obeys power law dependence on time. A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.</description><identifier>ISBN: 9781424421855</identifier><identifier>ISBN: 1424421853</identifier><identifier>EISBN: 9781424421862</identifier><identifier>EISBN: 1424421861</identifier><identifier>DOI: 10.1109/ICSICT.2008.4734625</identifier><identifier>LCCN: 2008901172</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuits ; Degradation ; Dielectric measurements ; Microelectronics ; MOSFETs ; Negative bias temperature instability ; Niobium compounds ; Phase measurement ; Stress measurement ; Titanium compounds</subject><ispartof>2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, p.636-639</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4734625$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4734625$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jiaqi Yang</creatorcontrib><creatorcontrib>Junyan Pan</creatorcontrib><creatorcontrib>Lihua Huang</creatorcontrib><creatorcontrib>Xiaoyan Liu</creatorcontrib><creatorcontrib>Ruqi Han</creatorcontrib><creatorcontrib>Jinfeng Kang</creatorcontrib><creatorcontrib>Zhang, L.F.</creatorcontrib><creatorcontrib>Zhu, Z.W.</creatorcontrib><creatorcontrib>Liao, C.C.</creatorcontrib><creatorcontrib>Wu, H.M.</creatorcontrib><title>Recovery characteristics of NBTI of pMOSFETs with oxynitride dielectrics under drain bias</title><title>2008 9th International Conference on Solid-State and Integrated-Circuit Technology</title><addtitle>ICSICT</addtitle><description>In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high |V ds | region but also suppresses the recovery ratio of NBTI. The time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial 1s. While in long time scale, the recovery obeys power law dependence on time. A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.</description><subject>Circuits</subject><subject>Degradation</subject><subject>Dielectric measurements</subject><subject>Microelectronics</subject><subject>MOSFETs</subject><subject>Negative bias temperature instability</subject><subject>Niobium compounds</subject><subject>Phase measurement</subject><subject>Stress measurement</subject><subject>Titanium compounds</subject><isbn>9781424421855</isbn><isbn>1424421853</isbn><isbn>9781424421862</isbn><isbn>1424421861</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkM1OwzAQhI1QJaDkCXrxCyTYsR3HR4iARipUouHAqXLstWpUksoOP3l7UtELe9iZ0Y6-wyK0oCSjlKibutrUVZPlhJQZl4wXuThDiZIl5TnnOS2L_PxfFmKGro51RSiV-QVKYnwn03DBilJcorcXMP0XhBGbnQ7aDBB8HLyJuHf4-a6pj3p4Wm8e7puIv_2ww_3P2PkheAvYetiDmfzU_-wsBGyD9h1uvY7XaOb0PkJy0jl6nRjVMl2tH-vqdpV6KsWQcqZaSRR3pWbCGQvTItQJIiWVbSm0pGq6OqqYa4FZ4bjUVgrNlClE4dgcLf64HgC2h-A_dBi3p--wX4JmVqc</recordid><startdate>200810</startdate><enddate>200810</enddate><creator>Jiaqi Yang</creator><creator>Junyan Pan</creator><creator>Lihua Huang</creator><creator>Xiaoyan Liu</creator><creator>Ruqi Han</creator><creator>Jinfeng Kang</creator><creator>Zhang, L.F.</creator><creator>Zhu, Z.W.</creator><creator>Liao, C.C.</creator><creator>Wu, H.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200810</creationdate><title>Recovery characteristics of NBTI of pMOSFETs with oxynitride dielectrics under drain bias</title><author>Jiaqi Yang ; Junyan Pan ; Lihua Huang ; Xiaoyan Liu ; Ruqi Han ; Jinfeng Kang ; Zhang, L.F. ; Zhu, Z.W. ; Liao, C.C. ; Wu, H.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-439b7094f8a35fcde5fc01f507717b85a71994ff193fbe3d5f47ad75a39c656f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Circuits</topic><topic>Degradation</topic><topic>Dielectric measurements</topic><topic>Microelectronics</topic><topic>MOSFETs</topic><topic>Negative bias temperature instability</topic><topic>Niobium compounds</topic><topic>Phase measurement</topic><topic>Stress measurement</topic><topic>Titanium compounds</topic><toplevel>online_resources</toplevel><creatorcontrib>Jiaqi Yang</creatorcontrib><creatorcontrib>Junyan Pan</creatorcontrib><creatorcontrib>Lihua Huang</creatorcontrib><creatorcontrib>Xiaoyan Liu</creatorcontrib><creatorcontrib>Ruqi Han</creatorcontrib><creatorcontrib>Jinfeng Kang</creatorcontrib><creatorcontrib>Zhang, L.F.</creatorcontrib><creatorcontrib>Zhu, Z.W.</creatorcontrib><creatorcontrib>Liao, C.C.</creatorcontrib><creatorcontrib>Wu, H.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jiaqi Yang</au><au>Junyan Pan</au><au>Lihua Huang</au><au>Xiaoyan Liu</au><au>Ruqi Han</au><au>Jinfeng Kang</au><au>Zhang, L.F.</au><au>Zhu, Z.W.</au><au>Liao, C.C.</au><au>Wu, H.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Recovery characteristics of NBTI of pMOSFETs with oxynitride dielectrics under drain bias</atitle><btitle>2008 9th International Conference on Solid-State and Integrated-Circuit Technology</btitle><stitle>ICSICT</stitle><date>2008-10</date><risdate>2008</risdate><spage>636</spage><epage>639</epage><pages>636-639</pages><isbn>9781424421855</isbn><isbn>1424421853</isbn><eisbn>9781424421862</eisbn><eisbn>1424421861</eisbn><abstract>In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high |V ds | region but also suppresses the recovery ratio of NBTI. The time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial 1s. While in long time scale, the recovery obeys power law dependence on time. A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.</abstract><pub>IEEE</pub><doi>10.1109/ICSICT.2008.4734625</doi><tpages>4</tpages></addata></record> |
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ispartof | 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, p.636-639 |
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subjects | Circuits Degradation Dielectric measurements Microelectronics MOSFETs Negative bias temperature instability Niobium compounds Phase measurement Stress measurement Titanium compounds |
title | Recovery characteristics of NBTI of pMOSFETs with oxynitride dielectrics under drain bias |
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