Recovery characteristics of NBTI of pMOSFETs with oxynitride dielectrics under drain bias

In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high |V ds | region but also suppresses the recovery ratio of NBTI. The time evolutions...

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Hauptverfasser: Jiaqi Yang, Junyan Pan, Lihua Huang, Xiaoyan Liu, Ruqi Han, Jinfeng Kang, Zhang, L.F., Zhu, Z.W., Liao, C.C., Wu, H.M.
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creator Jiaqi Yang
Junyan Pan
Lihua Huang
Xiaoyan Liu
Ruqi Han
Jinfeng Kang
Zhang, L.F.
Zhu, Z.W.
Liao, C.C.
Wu, H.M.
description In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high |V ds | region but also suppresses the recovery ratio of NBTI. The time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial 1s. While in long time scale, the recovery obeys power law dependence on time. A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.
doi_str_mv 10.1109/ICSICT.2008.4734625
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subjects Circuits
Degradation
Dielectric measurements
Microelectronics
MOSFETs
Negative bias temperature instability
Niobium compounds
Phase measurement
Stress measurement
Titanium compounds
title Recovery characteristics of NBTI of pMOSFETs with oxynitride dielectrics under drain bias
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