Recovery characteristics of NBTI of pMOSFETs with oxynitride dielectrics under drain bias

In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high |V ds | region but also suppresses the recovery ratio of NBTI. The time evolutions...

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Bibliographische Detailangaben

Hauptverfasser:	Jiaqi Yang, Junyan Pan, Lihua Huang, Xiaoyan Liu, Ruqi Han, Jinfeng Kang, Zhang, L.F., Zhu, Z.W., Liao, C.C., Wu, H.M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuits Degradation Dielectric measurements Microelectronics MOSFETs Negative bias temperature instability Niobium compounds Phase measurement Stress measurement Titanium compounds
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