OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact...

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Veröffentlicht in:Materials science forum 2012-05, Vol.717-720, p.545-548
Hauptverfasser: Planson, Dominique, Nguyen, D.M., Tournier, Dominique, Pâques, Gontran, Scharnholz, Sigo, Dheilly, Nicolas, Raynaud, Christophe, Lazar, Mihai
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Sprache:eng
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Zusammenfassung:Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact ionization coefficients for 4H-SiC have been extracted in the electric field range from 3 to 4.8 MV/cm. In combination with ionization coefficients in our previous paper extracted from diodes with lowly doped avalanche region, we propose a set of parameters of impact ionization coefficients for 4H-SiC, applicable to a wide electric field range.
ISSN:0255-5476
1662-9752
1662-9752
1662-9760
DOI:10.4028/www.scientific.net/MSF.717-720.545