OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact...

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Veröffentlicht in:	Materials science forum 2012-05, Vol.717-720, p.545-548
Hauptverfasser:	Planson, Dominique, Nguyen, D.M., Tournier, Dominique, Pâques, Gontran, Scharnholz, Sigo, Dheilly, Nicolas, Raynaud, Christophe, Lazar, Mihai
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric power Engineering Sciences
Online-Zugang:	Volltext
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