SECOND HARMONIC-BASED METHOD AND APPARATUS FOR MEASURING SEMICONDUCTOR MULTILAYER STRUCTURE

The present invention provides a second harmonic-based method and apparatus for global measurement of wafers. The solution comprises three approaches, i.e., fixed-point measurement, scanning measurement, and a combination of fixed-point measurement and scanning measurement. According to the solution...

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Bibliographische Detailangaben
Hauptverfasser: HUANG, Chongji, ZHOU, Puxi, ZHAO, Weiwei
Format: Patent
Sprache:chi ; eng ; fre
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Zusammenfassung:The present invention provides a second harmonic-based method and apparatus for global measurement of wafers. The solution comprises three approaches, i.e., fixed-point measurement, scanning measurement, and a combination of fixed-point measurement and scanning measurement. According to the solution of the scanning measurement, global measurement can be performed on a wafer while ensuring high measurement efficiency, so as to obtain the positions, sizes, and relative density distribution of electrical defects, thus achieving the positioning and troubleshooting of abnormal points on the wafer, which cannot be achieved by a previous second harmonic measurement technique. The present invention further provides a novel formula system describing a second harmonic signal, so that an actual measurement result and a theoretical model are both unified in three cases of the fixed-point measurement, the scanning measurement, and the combination of fixed-point measurement and scanning measurement, so that the second harm