SECOND HARMONIC-BASED METHOD AND APPARATUS FOR MEASURING SEMICONDUCTOR MULTILAYER STRUCTURE

The present invention provides a second harmonic-based method and apparatus for global measurement of wafers. The solution comprises three approaches, i.e., fixed-point measurement, scanning measurement, and a combination of fixed-point measurement and scanning measurement. According to the solution...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HUANG, Chongji, ZHOU, Puxi, ZHAO, Weiwei
Format: Patent
Sprache:chi ; eng ; fre
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