Semiconductor device with peripheral void space and method of making the same

A semiconductor device includes a first semiconductor region of a first conductivity type on a first electrode and a second semiconductor region of the first conductivity type on a central portion of the first semiconductor region. The second region has a carrier concentration less than a carrier co...

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Hauptverfasser: Tsuchitani Masanobu, Okumura Hideki, Yamaguchi Takuya, Jimbo Sadayuki
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes a first semiconductor region of a first conductivity type on a first electrode and a second semiconductor region of the first conductivity type on a central portion of the first semiconductor region. The second region has a carrier concentration less than a carrier concentration of the first region. A third semiconductor region of a second conductivity type is on the second semiconductor region. A first insulating portion covers a peripheral surface of the second semiconductor region and a peripheral surface of the third semiconductor region. A second insulating portion is spaced from the first insulating portion in a lateral direction. A void space is between the first and second insulating portions. A third insulating portion is on the third semiconductor region and spans and covers the void space. A second electrode is on the third semiconductor region and the third insulating portion.