Semiconductor device with peripheral void space and method of making the same
A semiconductor device includes a first semiconductor region of a first conductivity type on a first electrode and a second semiconductor region of the first conductivity type on a central portion of the first semiconductor region. The second region has a carrier concentration less than a carrier co...
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| creator | Tsuchitani Masanobu Okumura Hideki Yamaguchi Takuya Jimbo Sadayuki |
| description | A semiconductor device includes a first semiconductor region of a first conductivity type on a first electrode and a second semiconductor region of the first conductivity type on a central portion of the first semiconductor region. The second region has a carrier concentration less than a carrier concentration of the first region. A third semiconductor region of a second conductivity type is on the second semiconductor region. A first insulating portion covers a peripheral surface of the second semiconductor region and a peripheral surface of the third semiconductor region. A second insulating portion is spaced from the first insulating portion in a lateral direction. A void space is between the first and second insulating portions. A third insulating portion is on the third semiconductor region and spans and covers the void space. A second electrode is on the third semiconductor region and the third insulating portion. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device with peripheral void space and method of making the same |
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