Methods of forming electronic devices, and related electronic devices and electronic systems
An electronic device comprises a dielectric structure, interconnect structures extending into the dielectric structure and having uppermost vertical boundaries above uppermost vertical boundaries of the dielectric structure, an additional barrier material covering surfaces of the interconnect struct...
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creator | Eto, Toyonori Wang, Kuo-Chen |
description | An electronic device comprises a dielectric structure, interconnect structures extending into the dielectric structure and having uppermost vertical boundaries above uppermost vertical boundaries of the dielectric structure, an additional barrier material covering surfaces of the interconnect structures above the uppermost vertical boundaries of the dielectric structure, an isolation material overlying the additional barrier material, and at least one air gap laterally intervening between at least two of the interconnect structures laterally-neighboring one another. Each of the interconnect structures comprises a conductive material, and a barrier material intervening between the conductive material and the dielectric structure. The at least one air gap vertically extends from a lower portion of the isolation material, through the additional barrier material, and into the dielectric structure. Electronic systems and method of forming an electronic device are also described. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11069561B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11069561B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11069561B23</originalsourceid><addsrcrecordid>eNrjZIjxTS3JyE8pVshPU0jLL8rNzEtXSM1JTS4pys_LTFZISS3LTE4t1lFIzEtRKErNSSxJTcEiD5ZGEi6uLC5JzS3mYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGhgZmlqZmhk5GxsSoAQDEojw1</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Methods of forming electronic devices, and related electronic devices and electronic systems</title><source>esp@cenet</source><creator>Eto, Toyonori ; Wang, Kuo-Chen</creator><creatorcontrib>Eto, Toyonori ; Wang, Kuo-Chen</creatorcontrib><description>An electronic device comprises a dielectric structure, interconnect structures extending into the dielectric structure and having uppermost vertical boundaries above uppermost vertical boundaries of the dielectric structure, an additional barrier material covering surfaces of the interconnect structures above the uppermost vertical boundaries of the dielectric structure, an isolation material overlying the additional barrier material, and at least one air gap laterally intervening between at least two of the interconnect structures laterally-neighboring one another. Each of the interconnect structures comprises a conductive material, and a barrier material intervening between the conductive material and the dielectric structure. The at least one air gap vertically extends from a lower portion of the isolation material, through the additional barrier material, and into the dielectric structure. Electronic systems and method of forming an electronic device are also described.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210720&DB=EPODOC&CC=US&NR=11069561B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210720&DB=EPODOC&CC=US&NR=11069561B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Eto, Toyonori</creatorcontrib><creatorcontrib>Wang, Kuo-Chen</creatorcontrib><title>Methods of forming electronic devices, and related electronic devices and electronic systems</title><description>An electronic device comprises a dielectric structure, interconnect structures extending into the dielectric structure and having uppermost vertical boundaries above uppermost vertical boundaries of the dielectric structure, an additional barrier material covering surfaces of the interconnect structures above the uppermost vertical boundaries of the dielectric structure, an isolation material overlying the additional barrier material, and at least one air gap laterally intervening between at least two of the interconnect structures laterally-neighboring one another. Each of the interconnect structures comprises a conductive material, and a barrier material intervening between the conductive material and the dielectric structure. The at least one air gap vertically extends from a lower portion of the isolation material, through the additional barrier material, and into the dielectric structure. Electronic systems and method of forming an electronic device are also described.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIjxTS3JyE8pVshPU0jLL8rNzEtXSM1JTS4pys_LTFZISS3LTE4t1lFIzEtRKErNSSxJTcEiD5ZGEi6uLC5JzS3mYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGhgZmlqZmhk5GxsSoAQDEojw1</recordid><startdate>20210720</startdate><enddate>20210720</enddate><creator>Eto, Toyonori</creator><creator>Wang, Kuo-Chen</creator><scope>EVB</scope></search><sort><creationdate>20210720</creationdate><title>Methods of forming electronic devices, and related electronic devices and electronic systems</title><author>Eto, Toyonori ; Wang, Kuo-Chen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11069561B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Eto, Toyonori</creatorcontrib><creatorcontrib>Wang, Kuo-Chen</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Eto, Toyonori</au><au>Wang, Kuo-Chen</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods of forming electronic devices, and related electronic devices and electronic systems</title><date>2021-07-20</date><risdate>2021</risdate><abstract>An electronic device comprises a dielectric structure, interconnect structures extending into the dielectric structure and having uppermost vertical boundaries above uppermost vertical boundaries of the dielectric structure, an additional barrier material covering surfaces of the interconnect structures above the uppermost vertical boundaries of the dielectric structure, an isolation material overlying the additional barrier material, and at least one air gap laterally intervening between at least two of the interconnect structures laterally-neighboring one another. Each of the interconnect structures comprises a conductive material, and a barrier material intervening between the conductive material and the dielectric structure. The at least one air gap vertically extends from a lower portion of the isolation material, through the additional barrier material, and into the dielectric structure. Electronic systems and method of forming an electronic device are also described.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Methods of forming electronic devices, and related electronic devices and electronic systems |
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