Method and structure for FinFET devices

A semiconductor device includes a substrate, an isolation structure over the substrate, and at least one semiconductor layer over the substrate. A first portion of the at least one semiconductor layer is over the isolation structure and a second portion of the at least one semiconductor layer is sur...

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Bibliographische Detailangaben
Hauptverfasser: Chen, Hou-Yu, Lu, Yong-Yan, Soong, Chia-Wei
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a substrate, an isolation structure over the substrate, and at least one semiconductor layer over the substrate. A first portion of the at least one semiconductor layer is over the isolation structure and a second portion of the at least one semiconductor layer is surrounded by the isolation structure. A doped material layer is between the isolation structure and the second portion of the at least one semiconductor layer.