Method and structure for FinFET devices
A semiconductor device includes a substrate, an isolation structure over the substrate, and at least one semiconductor layer over the substrate. A first portion of the at least one semiconductor layer is over the isolation structure and a second portion of the at least one semiconductor layer is sur...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A semiconductor device includes a substrate, an isolation structure over the substrate, and at least one semiconductor layer over the substrate. A first portion of the at least one semiconductor layer is over the isolation structure and a second portion of the at least one semiconductor layer is surrounded by the isolation structure. A doped material layer is between the isolation structure and the second portion of the at least one semiconductor layer. |
---|