Wafer placement table

A wafer placement table 10 includes a ceramic base 20, an electrode (FR attraction electrode 27), a bonding terminal (power supply terminal 82), and an electrode lead-out portion 272. The ceramic base 20 has an upper surface serving as a wafer placement surface 22a. The FR attraction electrode 27 is...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TAKEBAYASHI, HIROSHI, KOJIMA, MITSURU
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A wafer placement table 10 includes a ceramic base 20, an electrode (FR attraction electrode 27), a bonding terminal (power supply terminal 82), and an electrode lead-out portion 272. The ceramic base 20 has an upper surface serving as a wafer placement surface 22a. The FR attraction electrode 27 is embedded in the ceramic base 20. The power supply terminal 82 is inserted into the ceramic base 20 from a lower surface of the ceramic base 20 and penetrates a through-hole 271 formed in the FR attraction electrode 27. The electrode lead-out portion 272 is provided at each of two or more positions at intervals along a peripheral edge of the through-hole 271 to be thicker than the FR attraction electrode 27 and has an inner peripheral surface 272a bonded to a side surface of the power supply terminal 82.