COMPOSITE SEMICONDUCTOR SUBSTRATE
PROBLEM TO BE SOLVED: To allow a 3-dimensional layout of elements to attain a multi-function high-integrated structure by bonding laminated layers of isolated semiconductor single crystal regions on a substrate with a first glass material and bonding the semiconductor single crystal regions with the...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To allow a 3-dimensional layout of elements to attain a multi-function high-integrated structure by bonding laminated layers of isolated semiconductor single crystal regions on a substrate with a first glass material and bonding the semiconductor single crystal regions with the substrate with a second glass material. SOLUTION: Layers of planar semiconductor single crystal regions 11 and 19 are separated and electrically insulated from each other and covered with insulation layers 12 and 16 at the peripheries. The surroundings of the regions 11 and 19 are covered with insulating film 12 and 16 respectively. The region 11 is bonded to a substrate 14 through a first glass material layer 13, and the regions 11 and 19 are bonded through a second glass material layer 17 whereby a multi-function highly integrated multi-layer dielectric isolation substrate superior in insulation and dielectric strength, and allowing elements to arrange planarly bit also 3-dimensionally disposable can be obtained. |
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