RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION COMPRISING ORGANORUTHENIUM COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION

PROBLEM TO BE SOLVED: To provide a raw material allowing for coping with low-temperature deposition, and producing a ruthenium thin film without using oxygen gas, the raw material being for chemical vapor deposition for producing a ruthenium/ruthenium compound thin film.SOLUTION: Concerning a raw ma...

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Hauptverfasser: ISHIZAKA TSUBASA, SHIGETOMI TOSHIYUKI, AOYAMA TATSUKI, HARADA RYOSUKE
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creator ISHIZAKA TSUBASA
SHIGETOMI TOSHIYUKI
AOYAMA TATSUKI
HARADA RYOSUKE
description PROBLEM TO BE SOLVED: To provide a raw material allowing for coping with low-temperature deposition, and producing a ruthenium thin film without using oxygen gas, the raw material being for chemical vapor deposition for producing a ruthenium/ruthenium compound thin film.SOLUTION: Concerning a raw material for chemical vapor deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method, the raw material for chemical vapor deposition comprises an organoruthenium compound in which two diaza-diene ligands and two alkyl ligands are coordinated with ruthenium as shown in following formula (Rare each H or a Chydrocarbon group; two or more of each Ror Rmay form a cyclic structure; Rand Rare each a Calkyl group).SELECTED DRAWING: Figure 1 【課題】ルテニウム・ルテニウム化合物薄膜製造のための化学蒸着用原料で、低温成膜に対応でき、酸素ガスを使用せずにルテニウム薄膜を製造可能な原料の提供。【解決手段】化学蒸着法によりルテニウム薄膜又はルテニウム化合物薄膜を製造するための化学蒸着用原料において、次式で示される、ルテニウムに2つのジアザジエン配位子、及び、2つのアルキル配位子が配位した有機ルテニウム化合物からなる化学蒸着用原料。(R1〜8はH又はC1−4の炭化水素基;R1〜4又は、R5〜8の各々が2つ以上で環状構造を形成しても良い;R9及びR10はC1−3のアルキル基)【選択図】図1
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2017053019A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2017053019A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2017053019A3</originalsourceid><addsrcrecordid>eNrjZFga5Biu4OsY4hrk6eij4OYfpODs4err6QzkhDkGALkurgH-wZ4hnv5-Cs7-vgFBnsGefu4K_kHujn7-QaEhHq5-nqG-YCn_UD8XHQVHPxc8Rvi6hnj4uyiEgg0h3moeBta0xJziVF4ozc2g5OYa4uyhm1qQH59aXJCYnJqXWhLvFWBkYGhuYGpsYGjpaEyUIgCjM0cZ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION COMPRISING ORGANORUTHENIUM COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION</title><source>esp@cenet</source><creator>ISHIZAKA TSUBASA ; SHIGETOMI TOSHIYUKI ; AOYAMA TATSUKI ; HARADA RYOSUKE</creator><creatorcontrib>ISHIZAKA TSUBASA ; SHIGETOMI TOSHIYUKI ; AOYAMA TATSUKI ; HARADA RYOSUKE</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a raw material allowing for coping with low-temperature deposition, and producing a ruthenium thin film without using oxygen gas, the raw material being for chemical vapor deposition for producing a ruthenium/ruthenium compound thin film.SOLUTION: Concerning a raw material for chemical vapor deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method, the raw material for chemical vapor deposition comprises an organoruthenium compound in which two diaza-diene ligands and two alkyl ligands are coordinated with ruthenium as shown in following formula (Rare each H or a Chydrocarbon group; two or more of each Ror Rmay form a cyclic structure; Rand Rare each a Calkyl group).SELECTED DRAWING: Figure 1 【課題】ルテニウム・ルテニウム化合物薄膜製造のための化学蒸着用原料で、低温成膜に対応でき、酸素ガスを使用せずにルテニウム薄膜を製造可能な原料の提供。【解決手段】化学蒸着法によりルテニウム薄膜又はルテニウム化合物薄膜を製造するための化学蒸着用原料において、次式で示される、ルテニウムに2つのジアザジエン配位子、及び、2つのアルキル配位子が配位した有機ルテニウム化合物からなる化学蒸着用原料。(R1〜8はH又はC1−4の炭化水素基;R1〜4又は、R5〜8の各々が2つ以上で環状構造を形成しても良い;R9及びR10はC1−3のアルキル基)【選択図】図1</description><language>eng ; jpn</language><subject>ACYCLIC OR CARBOCYCLIC COMPOUNDS ; ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; ORGANIC CHEMISTRY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170316&amp;DB=EPODOC&amp;CC=JP&amp;NR=2017053019A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20170316&amp;DB=EPODOC&amp;CC=JP&amp;NR=2017053019A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ISHIZAKA TSUBASA</creatorcontrib><creatorcontrib>SHIGETOMI TOSHIYUKI</creatorcontrib><creatorcontrib>AOYAMA TATSUKI</creatorcontrib><creatorcontrib>HARADA RYOSUKE</creatorcontrib><title>RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION COMPRISING ORGANORUTHENIUM COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION</title><description>PROBLEM TO BE SOLVED: To provide a raw material allowing for coping with low-temperature deposition, and producing a ruthenium thin film without using oxygen gas, the raw material being for chemical vapor deposition for producing a ruthenium/ruthenium compound thin film.SOLUTION: Concerning a raw material for chemical vapor deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method, the raw material for chemical vapor deposition comprises an organoruthenium compound in which two diaza-diene ligands and two alkyl ligands are coordinated with ruthenium as shown in following formula (Rare each H or a Chydrocarbon group; two or more of each Ror Rmay form a cyclic structure; Rand Rare each a Calkyl group).SELECTED DRAWING: Figure 1 【課題】ルテニウム・ルテニウム化合物薄膜製造のための化学蒸着用原料で、低温成膜に対応でき、酸素ガスを使用せずにルテニウム薄膜を製造可能な原料の提供。【解決手段】化学蒸着法によりルテニウム薄膜又はルテニウム化合物薄膜を製造するための化学蒸着用原料において、次式で示される、ルテニウムに2つのジアザジエン配位子、及び、2つのアルキル配位子が配位した有機ルテニウム化合物からなる化学蒸着用原料。(R1〜8はH又はC1−4の炭化水素基;R1〜4又は、R5〜8の各々が2つ以上で環状構造を形成しても良い;R9及びR10はC1−3のアルキル基)【選択図】図1</description><subject>ACYCLIC OR CARBOCYCLIC COMPOUNDS</subject><subject>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFga5Biu4OsY4hrk6eij4OYfpODs4err6QzkhDkGALkurgH-wZ4hnv5-Cs7-vgFBnsGefu4K_kHujn7-QaEhHq5-nqG-YCn_UD8XHQVHPxc8Rvi6hnj4uyiEgg0h3moeBta0xJziVF4ozc2g5OYa4uyhm1qQH59aXJCYnJqXWhLvFWBkYGhuYGpsYGjpaEyUIgCjM0cZ</recordid><startdate>20170316</startdate><enddate>20170316</enddate><creator>ISHIZAKA TSUBASA</creator><creator>SHIGETOMI TOSHIYUKI</creator><creator>AOYAMA TATSUKI</creator><creator>HARADA RYOSUKE</creator><scope>EVB</scope></search><sort><creationdate>20170316</creationdate><title>RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION COMPRISING ORGANORUTHENIUM COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION</title><author>ISHIZAKA TSUBASA ; SHIGETOMI TOSHIYUKI ; AOYAMA TATSUKI ; HARADA RYOSUKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2017053019A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2017</creationdate><topic>ACYCLIC OR CARBOCYCLIC COMPOUNDS</topic><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ISHIZAKA TSUBASA</creatorcontrib><creatorcontrib>SHIGETOMI TOSHIYUKI</creatorcontrib><creatorcontrib>AOYAMA TATSUKI</creatorcontrib><creatorcontrib>HARADA RYOSUKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ISHIZAKA TSUBASA</au><au>SHIGETOMI TOSHIYUKI</au><au>AOYAMA TATSUKI</au><au>HARADA RYOSUKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION COMPRISING ORGANORUTHENIUM COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION</title><date>2017-03-16</date><risdate>2017</risdate><abstract>PROBLEM TO BE SOLVED: To provide a raw material allowing for coping with low-temperature deposition, and producing a ruthenium thin film without using oxygen gas, the raw material being for chemical vapor deposition for producing a ruthenium/ruthenium compound thin film.SOLUTION: Concerning a raw material for chemical vapor deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method, the raw material for chemical vapor deposition comprises an organoruthenium compound in which two diaza-diene ligands and two alkyl ligands are coordinated with ruthenium as shown in following formula (Rare each H or a Chydrocarbon group; two or more of each Ror Rmay form a cyclic structure; Rand Rare each a Calkyl group).SELECTED DRAWING: Figure 1 【課題】ルテニウム・ルテニウム化合物薄膜製造のための化学蒸着用原料で、低温成膜に対応でき、酸素ガスを使用せずにルテニウム薄膜を製造可能な原料の提供。【解決手段】化学蒸着法によりルテニウム薄膜又はルテニウム化合物薄膜を製造するための化学蒸着用原料において、次式で示される、ルテニウムに2つのジアザジエン配位子、及び、2つのアルキル配位子が配位した有機ルテニウム化合物からなる化学蒸着用原料。(R1〜8はH又はC1−4の炭化水素基;R1〜4又は、R5〜8の各々が2つ以上で環状構造を形成しても良い;R9及びR10はC1−3のアルキル基)【選択図】図1</abstract><oa>free_for_read</oa></addata></record>
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subjects ACYCLIC OR CARBOCYCLIC COMPOUNDS
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION COMPRISING ORGANORUTHENIUM COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T23%3A56%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ISHIZAKA%20TSUBASA&rft.date=2017-03-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2017053019A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true