RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION COMPRISING ORGANORUTHENIUM COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION

PROBLEM TO BE SOLVED: To provide a raw material allowing for coping with low-temperature deposition, and producing a ruthenium thin film without using oxygen gas, the raw material being for chemical vapor deposition for producing a ruthenium/ruthenium compound thin film.SOLUTION: Concerning a raw ma...

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Hauptverfasser:	ISHIZAKA TSUBASA, SHIGETOMI TOSHIYUKI, AOYAMA TATSUKI, HARADA RYOSUKE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ACYCLIC OR CARBOCYCLIC COMPOUNDS ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a raw material allowing for coping with low-temperature deposition, and producing a ruthenium thin film without using oxygen gas, the raw material being for chemical vapor deposition for producing a ruthenium/ruthenium compound thin film.SOLUTION: Concerning a raw material for chemical vapor deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method, the raw material for chemical vapor deposition comprises an organoruthenium compound in which two diaza-diene ligands and two alkyl ligands are coordinated with ruthenium as shown in following formula (Rare each H or a Chydrocarbon group; two or more of each Ror Rmay form a cyclic structure; Rand Rare each a Calkyl group).SELECTED DRAWING: Figure 1 【課題】ルテニウム・ルテニウム化合物薄膜製造のための化学蒸着用原料で、低温成膜に対応でき、酸素ガスを使用せずにルテニウム薄膜を製造可能な原料の提供。【解決手段】化学蒸着法によりルテニウム薄膜又はルテニウム化合物薄膜を製造するための化学蒸着用原料において、次式で示される、ルテニウムに２つのジアザジエン配位子、及び、２つのアルキル配位子が配位した有機ルテニウム化合物からなる化学蒸着用原料。（Ｒ１〜８はＨ又はＣ１−４の炭化水素基；Ｒ１〜４又は、Ｒ５〜８の各々が２つ以上で環状構造を形成しても良い；Ｒ９及びＲ１０はＣ１−３のアルキル基）【選択図】図１