BLANK MASK AND METHOD FOR FABRICATING PHOTOMASK USING THE SAME

PROBLEM TO BE SOLVED: To provide a blank mask and a method for fabricating a photomask using the blank mask.SOLUTION: The blank mask comprises: a light-shielding film including a light-shielding layer and an antireflection layer; and a hard mask film. The light-shielding layer and the antireflection...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: JANG KYU-JIN, KANG GEUNG-WON, LEE JONG-HWA, NAM KEE SOO, LIANG ZHE GUI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a blank mask and a method for fabricating a photomask using the blank mask.SOLUTION: The blank mask comprises: a light-shielding film including a light-shielding layer and an antireflection layer; and a hard mask film. The light-shielding layer and the antireflection layer are constituted by combining a layer formed of a MoSi compound and a layer formed of a MoTaSi compound. In the blank mask, the light-shielding film can be formed as thin as 200 to 700 , which can achieve resolution of a pattern in a class of 32 nm or smaller, and thereby, a photomask having a pattern fidelity corresponding to the resolution can be formed. The light-shielding layer has an optical density of 2.0 to 4.0 at an exposure wavelength of 193 nm, and has excellent superior characteristics in chemical resistance and a process margin for defect repair. Further, the hard mask film is formed to a thickness of 20 to 50 by using a compound containing tin (Sn) and chromium (Cr), and thereby, an etching rate of the hard mask film can be decreased. Thus, a resist film can be formed thin, which achieves high resolution.