BLANK MASK AND METHOD FOR FABRICATING PHOTOMASK USING THE SAME
PROBLEM TO BE SOLVED: To provide a blank mask and a method for fabricating a photomask using the blank mask.SOLUTION: The blank mask comprises: a light-shielding film including a light-shielding layer and an antireflection layer; and a hard mask film. The light-shielding layer and the antireflection...
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| creator | JANG KYU-JIN KANG GEUNG-WON LEE JONG-HWA NAM KEE SOO LIANG ZHE GUI |
| description | PROBLEM TO BE SOLVED: To provide a blank mask and a method for fabricating a photomask using the blank mask.SOLUTION: The blank mask comprises: a light-shielding film including a light-shielding layer and an antireflection layer; and a hard mask film. The light-shielding layer and the antireflection layer are constituted by combining a layer formed of a MoSi compound and a layer formed of a MoTaSi compound. In the blank mask, the light-shielding film can be formed as thin as 200 to 700 , which can achieve resolution of a pattern in a class of 32 nm or smaller, and thereby, a photomask having a pattern fidelity corresponding to the resolution can be formed. The light-shielding layer has an optical density of 2.0 to 4.0 at an exposure wavelength of 193 nm, and has excellent superior characteristics in chemical resistance and a process margin for defect repair. Further, the hard mask film is formed to a thickness of 20 to 50 by using a compound containing tin (Sn) and chromium (Cr), and thereby, an etching rate of the hard mask film can be decreased. Thus, a resist film can be formed thin, which achieves high resolution. |
| format | Patent |
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The light-shielding layer and the antireflection layer are constituted by combining a layer formed of a MoSi compound and a layer formed of a MoTaSi compound. In the blank mask, the light-shielding film can be formed as thin as 200 to 700 , which can achieve resolution of a pattern in a class of 32 nm or smaller, and thereby, a photomask having a pattern fidelity corresponding to the resolution can be formed. The light-shielding layer has an optical density of 2.0 to 4.0 at an exposure wavelength of 193 nm, and has excellent superior characteristics in chemical resistance and a process margin for defect repair. Further, the hard mask film is formed to a thickness of 20 to 50 by using a compound containing tin (Sn) and chromium (Cr), and thereby, an etching rate of the hard mask film can be decreased. 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The light-shielding layer and the antireflection layer are constituted by combining a layer formed of a MoSi compound and a layer formed of a MoTaSi compound. In the blank mask, the light-shielding film can be formed as thin as 200 to 700 , which can achieve resolution of a pattern in a class of 32 nm or smaller, and thereby, a photomask having a pattern fidelity corresponding to the resolution can be formed. The light-shielding layer has an optical density of 2.0 to 4.0 at an exposure wavelength of 193 nm, and has excellent superior characteristics in chemical resistance and a process margin for defect repair. Further, the hard mask film is formed to a thickness of 20 to 50 by using a compound containing tin (Sn) and chromium (Cr), and thereby, an etching rate of the hard mask film can be decreased. Thus, a resist film can be formed thin, which achieves high resolution.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | BLANK MASK AND METHOD FOR FABRICATING PHOTOMASK USING THE SAME |
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