SILICON-BASED THIN FILM PRODUCTION APPARATUS, PHOTOELECTRIC CONVERSION DEVICE EQUIPPED WITH THE SAME, SILICON-BASED THIN FILM PRODUCTION METHOD AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD USING THE SAME
PROBLEM TO BE SOLVED: To provide a silicon-based thin film production method and a silicon-based thin film production apparatus, which can produce a silicon-based thin film of cluster free or of a minimal cluster while inhibiting decrease in film production speed.SOLUTION: A silicon-based thin film...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a silicon-based thin film production method and a silicon-based thin film production apparatus, which can produce a silicon-based thin film of cluster free or of a minimal cluster while inhibiting decrease in film production speed.SOLUTION: A silicon-based thin film production apparatus is an apparatus in which a material gas containing Si is supplied to the inside of a vacuum chamber in which a substrate 101 is housed and a high-frequency power is supplied to a discharge electrode 106 provided in a plasma generation part 103 to produce a silicon-based thin film on the substrate 101 by generating plasma of the material gas. The silicon-based thin film production apparatus comprises a cluster removal part 104 arranged between the substrate 101 and the discharge electrode 106. The cluster removal part 104 includes a plurality of openings in such a way that an opening ratio is 50% and over. The openings communicate the plasma generation part side and the substrate side. An opening width of the opening is not more than twice a mean free path of an Si nanocluster under a pressure in film production, and a length of the opening is not less than twice the opening width. |
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