SILICON-BASED THIN FILM PRODUCTION APPARATUS, PHOTOELECTRIC CONVERSION DEVICE EQUIPPED WITH THE SAME, SILICON-BASED THIN FILM PRODUCTION METHOD AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD USING THE SAME
PROBLEM TO BE SOLVED: To provide a silicon-based thin film production method and a silicon-based thin film production apparatus, which can produce a silicon-based thin film of cluster free or of a minimal cluster while inhibiting decrease in film production speed.SOLUTION: A silicon-based thin film...
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| creator | NAKANO SHINYA TAKEUCHI YOSHIAKI YAMANE TSUKASA |
| description | PROBLEM TO BE SOLVED: To provide a silicon-based thin film production method and a silicon-based thin film production apparatus, which can produce a silicon-based thin film of cluster free or of a minimal cluster while inhibiting decrease in film production speed.SOLUTION: A silicon-based thin film production apparatus is an apparatus in which a material gas containing Si is supplied to the inside of a vacuum chamber in which a substrate 101 is housed and a high-frequency power is supplied to a discharge electrode 106 provided in a plasma generation part 103 to produce a silicon-based thin film on the substrate 101 by generating plasma of the material gas. The silicon-based thin film production apparatus comprises a cluster removal part 104 arranged between the substrate 101 and the discharge electrode 106. The cluster removal part 104 includes a plurality of openings in such a way that an opening ratio is 50% and over. The openings communicate the plasma generation part side and the substrate side. An opening width of the opening is not more than twice a mean free path of an Si nanocluster under a pressure in film production, and a length of the opening is not less than twice the opening width. |
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The silicon-based thin film production apparatus comprises a cluster removal part 104 arranged between the substrate 101 and the discharge electrode 106. The cluster removal part 104 includes a plurality of openings in such a way that an opening ratio is 50% and over. The openings communicate the plasma generation part side and the substrate side. An opening width of the opening is not more than twice a mean free path of an Si nanocluster under a pressure in film production, and a length of the opening is not less than twice the opening width.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121129&DB=EPODOC&CC=JP&NR=2012234950A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121129&DB=EPODOC&CC=JP&NR=2012234950A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKANO SHINYA</creatorcontrib><creatorcontrib>TAKEUCHI YOSHIAKI</creatorcontrib><creatorcontrib>YAMANE TSUKASA</creatorcontrib><title>SILICON-BASED THIN FILM PRODUCTION APPARATUS, PHOTOELECTRIC CONVERSION DEVICE EQUIPPED WITH THE SAME, SILICON-BASED THIN FILM PRODUCTION METHOD AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD USING THE SAME</title><description>PROBLEM TO BE SOLVED: To provide a silicon-based thin film production method and a silicon-based thin film production apparatus, which can produce a silicon-based thin film of cluster free or of a minimal cluster while inhibiting decrease in film production speed.SOLUTION: A silicon-based thin film production apparatus is an apparatus in which a material gas containing Si is supplied to the inside of a vacuum chamber in which a substrate 101 is housed and a high-frequency power is supplied to a discharge electrode 106 provided in a plasma generation part 103 to produce a silicon-based thin film on the substrate 101 by generating plasma of the material gas. 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The silicon-based thin film production apparatus comprises a cluster removal part 104 arranged between the substrate 101 and the discharge electrode 106. The cluster removal part 104 includes a plurality of openings in such a way that an opening ratio is 50% and over. The openings communicate the plasma generation part side and the substrate side. An opening width of the opening is not more than twice a mean free path of an Si nanocluster under a pressure in film production, and a length of the opening is not less than twice the opening width.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SILICON-BASED THIN FILM PRODUCTION APPARATUS, PHOTOELECTRIC CONVERSION DEVICE EQUIPPED WITH THE SAME, SILICON-BASED THIN FILM PRODUCTION METHOD AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD USING THE SAME |
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