METHOD COMPRISING PRODUCING AT LEAST ONE ASSEMBLY PAD ON A SUPPORT AND SELF-ASSEMBLY OF AN INTEGRATED CIRCUIT CHIP ON THE SUPPORT WITH FORMATION OF A FLUOROCARBON MATERIAL SURROUNDING THE PAD AND EXPOSURE OF THE PAD AND OF THE FLUOROCARBON MATERIAL TO ULTRAVIOLET TREATMENT IN THE PRESENCE OF OZONE

A method for producing at least one pad assembly (32, 50) on a support (19, 43) for use in a method for self-assembling at least one element (10) on the support (19, 43), comprises fanning, on the support (19, 43), a layer (28, 48) of at least one fluorinated material around the location (30, 44) of...

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Hauptverfasser: DI CIOCCIO, Léa, MERMOZ, Sébastien, SANCHEZ, Loïc
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Sprache:eng ; fre ; ger
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creator DI CIOCCIO, Léa
MERMOZ, Sébastien
SANCHEZ, Loïc
description A method for producing at least one pad assembly (32, 50) on a support (19, 43) for use in a method for self-assembling at least one element (10) on the support (19, 43), comprises fanning, on the support (19, 43), a layer (28, 48) of at least one fluorinated material around the location (30, 44) of the pad assembly (32, 50), the layer (28, 48) having a thickness greater than 10 nm. The layer (28, 48) and the location (30, 44) are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly (32, 50) at said location (30, 44), wherein a drop of liquid (16) having a static contact angle on the pad assembly (32, 50) less than or equal to 15°, after the exposure to the ultraviolet treatment, has a static contact angle on the layer (28, 48) greater than or equal to 100°.
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The layer (28, 48) and the location (30, 44) are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly (32, 50) at said location (30, 44), wherein a drop of liquid (16) having a static contact angle on the pad assembly (32, 50) less than or equal to 15°, after the exposure to the ultraviolet treatment, has a static contact angle on the layer (28, 48) greater than or equal to 100°.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190605&amp;DB=EPODOC&amp;CC=EP&amp;NR=2828888B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190605&amp;DB=EPODOC&amp;CC=EP&amp;NR=2828888B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DI CIOCCIO, Léa</creatorcontrib><creatorcontrib>MERMOZ, Sébastien</creatorcontrib><creatorcontrib>SANCHEZ, Loïc</creatorcontrib><title>METHOD COMPRISING PRODUCING AT LEAST ONE ASSEMBLY PAD ON A SUPPORT AND SELF-ASSEMBLY OF AN INTEGRATED CIRCUIT CHIP ON THE SUPPORT WITH FORMATION OF A FLUOROCARBON MATERIAL SURROUNDING THE PAD AND EXPOSURE OF THE PAD AND OF THE FLUOROCARBON MATERIAL TO ULTRAVIOLET TREATMENT IN THE PRESENCE OF OZONE</title><description>A method for producing at least one pad assembly (32, 50) on a support (19, 43) for use in a method for self-assembling at least one element (10) on the support (19, 43), comprises fanning, on the support (19, 43), a layer (28, 48) of at least one fluorinated material around the location (30, 44) of the pad assembly (32, 50), the layer (28, 48) having a thickness greater than 10 nm. 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The layer (28, 48) and the location (30, 44) are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly (32, 50) at said location (30, 44), wherein a drop of liquid (16) having a static contact angle on the pad assembly (32, 50) less than or equal to 15°, after the exposure to the ultraviolet treatment, has a static contact angle on the layer (28, 48) greater than or equal to 100°.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD COMPRISING PRODUCING AT LEAST ONE ASSEMBLY PAD ON A SUPPORT AND SELF-ASSEMBLY OF AN INTEGRATED CIRCUIT CHIP ON THE SUPPORT WITH FORMATION OF A FLUOROCARBON MATERIAL SURROUNDING THE PAD AND EXPOSURE OF THE PAD AND OF THE FLUOROCARBON MATERIAL TO ULTRAVIOLET TREATMENT IN THE PRESENCE OF OZONE
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