Manufacturing method of silicon through hole
The invention discloses a method for manufacturing a through silicon via, which comprises the following steps of: executing first-time etching, and forming a through silicon via with a first shape, of which the side wall and the top are respectively provided with scallop patterns and side-cut sharp...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a method for manufacturing a through silicon via, which comprises the following steps of: executing first-time etching, and forming a through silicon via with a first shape, of which the side wall and the top are respectively provided with scallop patterns and side-cut sharp corners, on the surface of a silicon substrate; second etching is carried out, the side wall of the silicon through hole with the first morphology is processed, and at least the protruding part of the scallop patterns is removed, so that a silicon through hole with a second morphology is formed; and performing third etching, processing the top of the through silicon via with the second morphology, and further removing the side-cut sharp corner to form a through silicon via with a third morphology. According to the method, the size of scallop patterns on the side wall of a conventional silicon through hole can be reduced, and a top side cut sharp corner is eliminated, so that the flatness of the side wall of the fin |
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