Manufacturing method of silicon through hole

The invention discloses a method for manufacturing a through silicon via, which comprises the following steps of: executing first-time etching, and forming a through silicon via with a first shape, of which the side wall and the top are respectively provided with scallop patterns and side-cut sharp...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LI MENG, ZUO QINGYUN, TIAN WEISI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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