Semiconductor device

A semiconductor device is disclosed. The semiconductor device includes: a gate stack structure including gate patterns and insulating patterns alternately stacked with each other; a gate insulating layer on a sidewall of the gate stack structure; a channel layer surrounded by the gate insulating lay...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: WOO JONG-HO, KIM KYONG-HUN, LU YINGZHI, WOO MYUNG-HUN, KANG JOO-HEON
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor device is disclosed. The semiconductor device includes: a gate stack structure including gate patterns and insulating patterns alternately stacked with each other; a gate insulating layer on a sidewall of the gate stack structure; a channel layer surrounded by the gate insulating layer; a source line surrounded by the channel layer; a variable resistance layer surrounded by the channel layer; and a drain line surrounded by the channel layer. 公开了一种半导体装置。该半导体装置包括:栅极堆叠结构,包括彼此交替地堆叠的栅极图案和绝缘图案;栅极绝缘层,在栅极堆叠结构的侧壁上;沟道层,被栅极绝缘层围绕;源极线,被沟道层围绕;可变电阻层,被沟道层围绕;以及漏极线,被沟道层围绕。