Temperature compensation layer planarization method for temperature compensation type acoustic surface wave device
The invention discloses a temperature compensation layer planarization method for a temperature compensation type acoustic surface wave device. The method comprises the steps of measuring a height difference between silicon dioxide on a metal finger strip subjected to temperature compensation layer...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a temperature compensation layer planarization method for a temperature compensation type acoustic surface wave device. The method comprises the steps of measuring a height difference between silicon dioxide on a metal finger strip subjected to temperature compensation layer coating and silicon dioxide on a metal finger web; coating a temperature compensation layer with dryetching-resistant photoresist; removing the photoresist, until the photoresist on the silicon dioxide on the metal finger strip is completely removed; calculating the thickness of the photoresist onthe silicon dioxide on the metal finger web; based on the thickness of the photoresist on the silicon dioxide on the metal finger web, selecting an etching selection ratio to perform dry etching; removing all the photoresist by adopting a dry photoresist removal process; measuring a thickness deviation of the temperature compensation layer; and importing the thickness deviation to an argon ion selectivity frequency modulat |
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